Semiconductor nanocrystalline composite chalcogenide glass ceramic material and preparation method thereof

A technology of nanocrystalline composite and chalcogenide glass, which is applied in the field of chalcogenide glass-ceramic materials, can solve the problems of performance and preparation of composite materials, and achieve the effect of improving thermodynamic stability and environmental impact resistance

Active Publication Date: 2014-01-29
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in the preparation process of chalcogenide glass ceramics, issues such as the design and selection of suitable glass composition, and the control of specific precipitated crystal phases (such as semiconductor nanocrystals) have not yet been involved.
Among them, infrared-transmitting III-S-based semiconductor nanocrystals (Ga 2 S 3 and In 2 S 3 ) The performance and preparation of composite materials have not seen related literature reports and patents

Method used

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  • Semiconductor nanocrystalline composite chalcogenide glass ceramic material and preparation method thereof
  • Semiconductor nanocrystalline composite chalcogenide glass ceramic material and preparation method thereof
  • Semiconductor nanocrystalline composite chalcogenide glass ceramic material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] An infrared transparent Ga 2 S 3 Nanocrystalline composite chalcogenide glass-ceramic material, its molar composition is expressed as: 0.62GeS 2 0.13Sb 2 S 3 0.25Ga 2 S 3 , at figure 1 Ga shown 2 S 3 The glass composition range in which the crystals are precipitated.

[0029] The specific preparation method is as follows:

[0030] (1) Composition selection: such as figure 1 As shown, according to the crystal phase precipitated as needed (Ga 2 S 3 or In 2 S 3 ), determine the corresponding quasi-binary or quasi-ternary glass system such as GeS 2 -Ga 2 S 3 、GeS 2 -Sb 2 S 3 -Ga 2 S 3 or GeS 2 -In 2 S 3 、GeS 2 -Sb 2 S 3 -In 2 S 3 The range of glass formation, and then select the glass composition that is rich in the composition of the crystal phase to be precipitated at the edge of the formation range, so as to determine the molar composition chemical formula (1-x-y)GeS 2 · xSb 2 S 3 ·yM 2 S 3 Medium x and y values, rich in the crystal phas...

Embodiment 2

[0038] An infrared-transmitting In 2 S 3 Nanocrystalline composite chalcogenide glass ceramics, its molar composition is expressed as: 0.65GeS 2 0.20Sb 2 S 3 0.15In 2 S 3 , at figure 2 Shown In 2 S 3 The glass composition range in which the crystals are precipitated.

[0039] The specific preparation method is as follows:

[0040] (1) Composition selection: such as figure 1 As shown, according to the crystal phase precipitated as needed (Ga 2 S 3 or In 2 S 3 ), determine the corresponding quasi-binary or quasi-ternary glass system such as GeS 2 -Ga 2 S 3 、GeS 2 -Sb 2 S 3 -Ga 2 S 3 or GeS 2 -In 2 S 3 、GeS 2 -Sb 2 S 3 -In 2 S 3 The range of glass formation, and then select the glass composition that is rich in the composition of the crystal phase to be precipitated at the edge of the formation range, so as to determine the molar composition chemical formula (1-x-y)GeS 2 · xSb 2 S 3 ·yM 2 S 3 Medium x and y values, rich in the crystal phase comp...

Embodiment 3-4

[0048] In the following examples, the preparation methods of glass and glass ceramics are the same as in Example 1, and the different glass compositions and performance test results used are listed in Table 1 and Table 2, respectively.

[0049] The glass composition of table 1 embodiment 3-4

[0050] serial number

GeS 2

Sb 2 S 3

Ga 2 S 3

Example 3

0.70

0.10

0.20

Example 4

0.79

0.05

0.16

[0051] The performance test result of the base glass and glass-ceramic of table 2 embodiment 3-4

[0052]

[0053] Note: The second harmonic signal strength in the table is the ratio of Y-cut quartz crystal.

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Abstract

The invention discloses a semiconductor nanocrystalline composite chalcogenide glass ceramic material and a preparation method thereof. The molar composition of the semiconductor nanocrystalline composite chalcogenide glass ceramic material is represented as (1-x-y)GeS2.xSb2S3.yM2S3, wherein, x represents 0-0.4, y represents 0.10-0.25, M represents Ga or In. The preparation method comprises the following steps: taking Ge, Sb, M and S according to the molar composition, and heating and mixing; preparing basic glass; then testing to obtain the basic glass sample having a nucleation temperature of 300-380 DEG C and a grain growth temperature of 320-420 DEG C; and finally carrying out nucleation and crystallization to obtain the semiconductor nanocrystalline composite chalcogenide glass ceramic material. The prepared semiconductor nanocrystalline composite chalcogenide glass ceramic material has obviously improved hardness, fracture toughness and other mechanical properties and second order nonlinear optical properties. According to the invention, proper glass composition can be designed and selected according to demands in the preparation process, and the crystalline phase without centre of inversion symmetry is precipitated with being controlled.

Description

technical field [0001] The invention relates to a chalcogenide glass-ceramic material, in particular to a semiconductor nanocrystalline composite chalcogenide glass-ceramic material and a preparation method thereof Background technique [0002] In recent years, with the improvement of infrared detector technology and processing technology, the application of infrared detection optical system has become more and more extensive, and the use environment has become more and more complex, especially the development of large-scale military weapons and equipment and various commercial and civilian applications. The requirements for system performance and cost are getting higher and higher. The development of miniaturized and integrated infrared optical systems involving thermal imaging, infrared remote sensing / chemical sensing, infrared laser tuning devices, and infrared solid-state lasers has put forward higher requirements for infrared optical materials. very important. [0003...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C10/02
Inventor 林常规戴世勋聂秋华徐铁峰沈祥王训四宋宝安许银生
Owner NINGBO UNIV
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