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White-light LED (light-emitting diode) chip structure with self-assembly nano structure

A technology of LED chips and nanostructures, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low light extraction efficiency of light-emitting diodes, achieve low resistance value, improve light extraction efficiency, and high conductivity.

Inactive Publication Date: 2015-01-14
SHANXI FEIHONG MICRO NANO PHOTOELECTRONICS SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In order to solve the problem that the chip structure of the existing white light emitting diode easily leads to the reduction of the light extraction efficiency of the light emitting diode, the present invention provides a white light LED chip structure with a self-organized nanostructure

Method used

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  • White-light LED (light-emitting diode) chip structure with self-assembly nano structure
  • White-light LED (light-emitting diode) chip structure with self-assembly nano structure
  • White-light LED (light-emitting diode) chip structure with self-assembly nano structure

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Embodiment Construction

[0011] White light LED chip structure with self-organized nanostructure, including sapphire substrate 1, N-type GaN epitaxial layer 2, multi-layer quantum well InGaN active layer 3, P-type GaN epitaxial layer 4, negative electrode metal Layer 6, and positive electrode metal layer 7; also includes indium zinc oxide transparent conductive layer 5 with a self-organized nanostructure; wherein, N-type gallium nitride epitaxial layer 2 is stacked on sapphire substrate 1; multilayer quantum well nitrogen The InGaN active layer 3 is stacked on the N-type GaN epitaxial layer 2, and the N-type GaN epitaxial layer 2 is partially exposed outside the multilayer quantum well InGaN active layer 3; the P-type GaN epitaxial layer 4 is stacked on the multilayer quantum well indium gallium nitride active layer 3; the indium zinc oxide transparent conductive layer 5 with a self-constituted nanostructure is stacked on the p-type gallium nitride epitaxial layer 4, and the p-type gallium nitride epit...

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Abstract

The invention relates to an LED (light-emitting diode) assembly, and in particular relates to a white-light LED chip structure with a self-assembly nano structure, solving the problem that the chip structure of the existing white-light LED easily causes the reduction of the light taking out efficiency of the LED. The white-light LED chip structure with the self-assembly nano structure comprises a sapphire substrate, an N-type gallium nitride epitaxial layer, a multilayer quantum well indium gallium nitride active layer, a P-type gallium nitride epitaxial layer, a negative electrode metal layer and a positive electrode metal layer as well as an indium zinc oxide transparent conductive layer with the self-assembly nano structure, wherein the N-type gallium nitride epitaxial layer is stacked on the sapphire substrate; and the multilayer quantum well indium gallium nitride active layer is stacked on the N-type gallium nitride epitaxial layer. Based on the brandnew structure, the problem that the chip structure of the existing white-light LED easily causes the reduction of the light taking out efficiency of the LED can be solved, and the white-light LED chip structure is applicable to production of LEDs.

Description

technical field [0001] The invention relates to a light-emitting diode assembly, in particular to a white LED chip structure with a self-assembled nanostructure. Background technique [0002] A light-emitting diode is a solid-state semiconductor component made of various compound semiconductor materials. It can emit various colors of visible light or invisible light such as infrared rays and ultraviolet rays according to the energy gap characteristics of different materials. Wherein, the white light emitted by the white light emitting diode is mixed light formed by mixing color lights of at least two wavelengths. The chip structure of the existing white light emitting diode includes a sapphire substrate, an N-type GaN epitaxial layer, a multilayer quantum well InGaN active layer, a P-type GaN epitaxial layer, a negative electrode metal layer, and a positive electrode metal layer. Its working principle is: when the negative electrode metal layer and the positive electrode me...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/44
Inventor 许并社李天保马淑芳梁建刘旭光
Owner SHANXI FEIHONG MICRO NANO PHOTOELECTRONICS SCI & TECH
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