White-light LED (light-emitting diode) chip structure with self-assembly nano structure
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHANXI FEIHONG MICRO NANO PHOTOELECTRONICS SCI & TECH
- Publication Date
- 2012-10-17
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to a light-emitting diode assembly, in particular to a white LED chip structure with a self-assembled nanostructure. Background technique
[0002] A light-emitting diode is a solid-state semiconductor component made of various compound semiconductor materials. It can emit various colors of visible light or invisible light such as infrared rays and ultraviolet rays according to the energy gap characteristics of different materials. Wherein, the white light emitted by the white light emitting diode is mixed light formed by mixing color lights of at least two wavelengths. The chip structure of the existing white light emitting diode includes a sapphire substrate, an N-type GaN epitaxial layer, a multilayer quantum well InGaN active layer, a P-type GaN epitaxial layer, a negative electrode metal layer, and a positive electrode metal layer. Its working principle is: when the negative electrode metal layer and the positive electrode me...