Controlled Lateral Etch Method

Abstract

Disclosed is a controlled lateral etching method, including: forming a second material layer on a first material layer which includes a protrusion; forming a sidewall on the outside of the second material layer opposite to the vertical surface of the protrusion; forming a third material layer on the second material layer and the surface of the sidewall; covering a mask layer extending along the lateral surface direction of the first material layer on the third material layer; and performing lateral etching on the layer on the side face of the protrusion.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a controlled lateral etching method. Background technique [0002] In the semiconductor process, there is often a situation where material layers need to be etched laterally but not etched vertically. Here, the so-called "lateral direction" refers to the direction parallel to the substrate surface, and the so-called "vertical direction" refers to the direction perpendicular to the substrate surface. E.g, figure 1 An example of this is shown. like figure 1 As shown, a structure 101 protruding from the surface of the substrate is formed on the substrate 100, and the protruding structure 101 may be integrated with the substrate 100 (such as figure 1 shown in ), or may also be an additional material layer formed on the substrate 100 (not shown in the figure). Such configurations with protruding structures formed on the substrate are very common in the semiconductor field, su...

AI Technical Summary

Problems solved by technology

Second, in the etching process, there is no effective control for the etching in the lateral and vertical directions.

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