SiGe HBT (Heterojunction Bipolar Transistor) apparatus and manufacturing method thereof

Abstract

The invention discloses a SiGe HBT (Heterojunction Bipolar Transistor) apparatus which is in such a structure that a collector region is formed on the upper part of a P type substrate, a N type buried layer and a field oxide are formed on both sides of the collector region, the field oxide is located above the collector region and the N type buried layer, and a polycrystalline silicon field plate is formed on the upper part of the field oxide. A base region is located above the collector region and the field oxide, an emitting region and an isolative oxide which are adjacent are formed above the base region, isolative side walls are respectively formed next to the polycrystalline silicon field plate, the base region, the emitting region and the isolative oxide. The polycrystalline silicon field plate, the base region and the emitting region lead out a metal connecting wire through a contact hole. The N type buried layer leads out a metal connecting wire through the deep contact hole and connected with the metal connecting wire of the polycrystalline silicon field plate. Transitional metal layers are formed in the contact hole and the deep contact hole and filled with tungsten. The invention further discloses a manufacturing method of the SiGe HBT apparatus. According to the SiGe HBT apparatus provided by the invention, thickness and doping concentration of the collector region are not needed to be changed, and the breakdown voltage of the apparatus is enhanced by improving electric field distribution of the collector region.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a SiGe HBT device. The invention also relates to a manufacturing method of the SiGe HBT device. Background technique [0002] Modern communications require high-performance, low-noise, and low-cost RF components in high-frequency bands. Traditional Si material devices cannot meet new requirements for performance specifications, output power, and linearity. Power SiGeHBT (silicon-germanium heterojunction bipolar Transistors) play an important role in higher and wider frequency band power amplifiers. Compared with gallium arsenide devices, although it is still at a disadvantage in terms of frequency, SiGe HBT has better thermal conductivity and good substrate mechanical properties, which can better solve the heat dissipation problem of power amplifiers. SiGe HBT also has more Good linearity and higher integration; SiGe HBT is still a silicon-based technology and has goo...

AI Technical Summary

Problems solved by technology

[0002] Modern communications require high-performance, low-noise, and low-cost RF components in high-frequency bands. Traditional Si material devices cannot meet new requirements for performance specifications, output power, and linearity. Power SiGeHBT (silicon-germanium heterojunction bipolar Transistors) play an important role in higher and wider frequency band power amplifiers

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