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Method and apparatus for drying semiconductor wafer

A drying plate and gas technology, which is applied to the cleaning method using liquid, cleaning method and utensils, semiconductor/solid-state device manufacturing, etc., can solve the problems of increased defects, difficulty in drying wafers, etc., and achieve the effect of improving the drying effect

Inactive Publication Date: 2013-06-12
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, when drying wafers, especially when drying 300mm wafers (300mm wafers are gradually replacing the use of older 200mm wafer technology), there has been an increase in defects
[0006] The increasing miniaturization of devices formed on semiconductor wafers also makes it more difficult to dry the wafers

Method used

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  • Method and apparatus for drying semiconductor wafer
  • Method and apparatus for drying semiconductor wafer

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Embodiment Construction

[0034] Preferred embodiments of the present invention will now be described in more detail with reference to the accompanying drawings. The method of the present invention comprises rinsing the dish or dish with an aqueous rinse solution, followed by rinsing with IPA (in liquid form), wherein the IPA preferably has a water content of not more than 20% by mass, wherein the IPA temperature is higher than 60°C and lower than A temperature of 82°C was supplied.

[0035] The aqueous solution is preferably deionized water (DI water), but can also be a dilute solution of ozone, hydrofluoric acid, hydrochloric acid, carbonic acid or ammonia.

[0036] Continuous rinsing means that the rinsing with the aqueous solution is started after the rinsing with the IPA has started. This means that rinsing with IPA can be performed immediately after rinsing with aqueous solution; or there can be a period of time between the two rinsing steps; or rinsing with IPA can start before the end of rinsi...

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Abstract

A method and apparatus for drying semiconductor wafers uses hot isopropyl alcohol in liquid form at temperatures above 60 DEG C and below 82 DEG C. The use of hot IPA better avoids pattern collapse and permits reduced consumption of IPA. The wafer temperature can be maintained by applying hot deionized water to the opposite wafer side and by evaporating the hot IPA from the wafer surface by using heated nitrogen gas.

Description

technical field [0001] The present invention relates to a method and a device for drying the surface of a disc-shaped object. More particularly, the present invention relates to a method and apparatus for drying the surface of a disc-shaped article by rinsing with an aqueous rinse solution followed by rinsing with an organic solvent. Background technique [0002] In the semiconductor industry, silicon wafers are typically cleaned during production using techniques for drying the surface of a disc (eg, pre-photographic cleaning, post-CMP cleaning, and post-plasma cleaning). However, this drying method can be applied to other disk-like items such as optical discs, photomasks, reticles, magnetic disks or flat panel displays. When used in the semiconductor industry, it can also be applied to glass substrates (e.g. in silicon-on-insulator processes), III-V substrates (e.g. GaAs) or any other substrate used in the production of integrated circuits or carrier. [0003] Several d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B08B3/00B08B7/04
CPCH01L21/67034B08B3/00B08B7/04H01L21/302
Inventor 尹石民权汉照格哈德·伍尔兹弗雷德里克·科瓦奇
Owner LAM RES CORP