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Power semiconductor module and electric power conversion device using same

A power semiconductor, semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device components, power electronics modification, etc., can solve the problem of reaching the heat resistance temperature of power semiconductor components

Active Publication Date: 2014-03-19
HITACHI ASTEMO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the power conversion device outputs a large current, the heat generated in the power semiconductor element built in the power semiconductor module will increase, and the heat resistance temperature of the power semiconductor element will be reached if the heat capacity of the power semiconductor module and / or the power conversion device is not increased. , which becomes an obstacle to miniaturization

Method used

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  • Power semiconductor module and electric power conversion device using same
  • Power semiconductor module and electric power conversion device using same
  • Power semiconductor module and electric power conversion device using same

Examples

Experimental program
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Embodiment approach

[0027] The power conversion device of this embodiment can be applied to hybrid vehicles and pure electric vehicles. As a representative example, the figure 1 and figure 2 , the control structure and circuit structure when applied to a hybrid vehicle (hybrid electric vehicle) will be described.

[0028] figure 1 It is a figure which shows the control block of a hybrid vehicle.

[0029] The power conversion device according to the present embodiment will be described taking, as an example, an inverter device for driving a vehicle (inverter device) which is used in a motor system for driving a vehicle and whose installation environment and operating environment are extremely strict.

[0030] The vehicle driving inverter converts DC power supplied from an on-vehicle battery or an on-vehicle power generator constituting a vehicle power supply into predetermined AC power, supplies the obtained AC power to a vehicle driving motor, and controls the driving of the vehicle driving mo...

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Abstract

The power semiconductor module of the present invention comprises: a first package having an upper arm circuit part; a second package having a lower arm circuit part; a metal case in which are formed a housing space for housing the first and second packages, and an opening connected to the housing space; and an intermediate connection conductor for connecting the upper arm circuit part and the lower arm circuit part; the case including a first heat dissipation part and a second heat dissipation part that faces the first heat dissipation part with the housing space therebetween; the first package being arranged so that the direction in which the first and second packages are arranged is parallel to the plane in which the first and second heat dissipation parts face each other; and the intermediate connection conductor connecting, in the housing space of the case, an emitter-side terminal that extends from the first package and a connector-side terminal that extends from the second package.

Description

technical field [0001] The present invention relates to a power semiconductor module for converting direct current into alternating current and a power conversion device using the power semiconductor module, and more particularly to a power semiconductor module for supplying alternating current to a driving motor of a hybrid vehicle or an electric vehicle and using the same Power conversion device for power semiconductor modules. Background technique [0002] In recent years, power conversion devices have been required to be capable of outputting large currents and also to be miniaturized. If the power conversion device outputs a large current, the heat generated in the power semiconductor element built in the power semiconductor module will increase, and the heat resistance temperature of the power semiconductor element will be reached if the heat capacity of the power semiconductor module and / or the power conversion device is not increased. , becoming an obstacle to minia...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M7/48H01L25/07H01L25/18H05K7/20
CPCH01L23/473H05K7/1432H01L23/367H01L23/4334H01L24/33H05K7/209H01L25/115H01L2924/13091H01L2224/32245H05K7/2089H01L25/18H01L2924/13055H02M7/003H01L2924/07802H01L2924/181H05K7/14329H01L2924/00H01L2924/00012
Inventor 德山健中津欣也斋藤隆一佐藤俊也诹访时人
Owner HITACHI ASTEMO LTD
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