Nickel-platinum alloy sputtering target material and preparation method thereof

Abstract

The invention provides a nickel-platinum alloy sputtering target material and a preparation method thereof. In the nickel-platinum alloy sputtering target material, the platinum content is 0-5 atom%, the average crystal grain size of the target material is less than 80 mu m and the dimension of each crystal grain is not more than 150 mu m, the target material has uniformly-distributed diffraction-peak intensity combination, and the diffraction peak intensity at a single direction is not more than 50%, and the pass through flux (PTF) of the target material is larger than 40% and the measured value difference at different directions is within 5%. The nickel-platinum alloy sputtering target material is capable of reducing sputtering phenomena, and has relatively long service life. A film prepared from the target material has relatively good uniformity. The invention also aims at providing the preparation method of the above nickel-platinum alloy sputtering target material which has high pass through flux (PTF) and low platinum content.

Description

technical field [0001] The invention relates to the field of alloy casting and processing, in particular to a nickel-platinum alloy sputtering target and a preparation method thereof. Background technique [0002] The magnetic permeability (PTF, Pass Through Flux) of a sputtering target refers to the ratio of the magnetic field passing through the target to the applied magnetic field. The PTF of a non-magnetic target is 100%, meaning that no applied magnetic field is shunted by the target. The PTF value of the magnetic target is generally between 0 and 100%, and the PTF of most industrially produced materials is between 10% and 95%. There are many measurement methods for PTF, among which the standards ASTMF-1761-00 and F-2086-01 stipulated by the American Society for Testing and Materials are representative. [0003] Magnetron sputtering is a commonly used method in thin film preparation. In this method, the target is used as the cathode, and a permanent magnet or electrom...

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Problems solved by technology

However, this invention patent only discloses a method for reducing the hardness of Ni-Pt alloy ingots so that they can be rolled efficiently and stably, and does not involve any content about the PTF of the NiPt target and the specific rolling process

Chinese invention patent 200710168027.1 discloses an ultra-high-purity NiPt alloy and a sputtering target including the alloy. A 4N5NiPt sputtering target can be prepared by smelting, heating and mechanical treatment, but the particle size of the NiPt target prepared by this method is between 200 and Between 300 microns, such a coarse grain size is not conducive to the preparation of thin films with uniform structure, and the sputtering rate is low

Chinese invention patent 201180014500.50 discloses a nickel alloy sputtering target. In this invention, the PTF of the target is improved by adding at least 1 to 5 atomic percent of alloying elements in the NiPt alloy containing Pt5 to 30 atomic percent. The content of Pt is 5-30%. The existence of non-magnetic Pt element itself can improve the PTF of Ni. However, the NiPt target with Pt content below 5 atomic % and how to improve its PTF have not been involved.

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