Nitride-based transistor and method of fabricating the same
A technology of nitride system and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., and can solve problems such as degradation of withstand voltage of components, reduction of charge movement speed, and obstruction of charge flow
Inactive Publication Date: 2015-03-18
SEOUL SEMICONDUCTOR
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However, for such a horizontal type structure, it may occur that the flow of charges moving through the channel layer is hindered due to the electric field formed on the surface, thereby reducing the moving speed of the charges or due to the concentration of the electric field when the element is in operation. The problem of degradation of the withstand voltage (ruggedness) of the device due to the corner of the gate
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[0071] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the technology disclosed in the present invention is not limited to the embodiments described here, and may be embodied in other forms. In the drawings, in order to clearly show the constituent elements of each device, the dimensions such as the width and thickness of the constituent elements are slightly exaggerated and shown.
[0072] In this specification, when it is mentioned that one constituent element is located on the "upper side" or "lower side" of other constituent elements, it means that the said one constituent element is located on the "upper side" or "lower side" next to other constituent elements. ” and the case where an additional constituent element intervenes between these two constituent elements. In this specification, the terms so-called "upper" or "lower" are relative concepts set from the observer's viewpoint, so when the observe...
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A method of fabricating a nitride-based transistor is provided. The method includes sequentially forming a first nitride-based semiconductor layer doped with first type dopants, a second nitride-based semiconductor layer doped with second type dopants, and a third nitride-based semiconductor layer doped with the first type dopants on a substrate. A first trench is formed to penetrate the third and second nitride-based semiconductor layers and to extend into the first nitride-based semiconductor layer. A fourth nitride-based semiconductor layer doped with the first type dopants is formed to fill the first trench. A second trench is formed in the fourth nitride-based semiconductor layer. A gate electrode is formed in the second trench. A source electrode is formed to be electrically connected to at least one of the third and fourth nitride-based semiconductor layers, and a drain electrode is formed to be electrically connected to the first nitride-based semiconductor layer.
Description
technical field [0001] The present invention generally relates to nitride-based transistors. Background technique [0002] Thanks to the development of information and communication technology, the demand for high withstand voltage transistors operating in high-speed switching environments or high-voltage environments is increasing. In response to this, gallium nitride-based transistors that have recently appeared using group III-V semiconductor materials are suitable for ultra-high-speed signal processing because they can achieve high-speed switching operations compared with conventional silicon transistors. Not only that, they can also rely on The material itself has high withstand voltage characteristics and is used in high-voltage environments, so it has attracted attention in the industry. [0003] Such GaN-based transistors can be fabricated in a horizontal structure or a vertical structure. The horizontal structure refers to a structure in which the charge conductio...
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IPC IPC(8): H01L29/78H01L21/335
CPCH01L29/1037H01L29/2003H01L29/7827H01L29/41741H01L29/32H01L21/02502H01L21/0254H01L21/02458H01L21/0237H01L29/205H01L29/0649H01L23/367H01L29/4236H01L21/02639H01L29/7828H01L29/66446H01L29/66666H01L2924/0002H01L2924/00
Inventor竹谷元伸李宽铉金恩熙
OwnerSEOUL SEMICONDUCTOR