Solid-state imaging device

A solid-state imaging device and pixel technology, which is applied in the direction of electric solid-state devices, radiation control devices, transistors, etc., can solve the problems of signal-to-noise ratio degradation and signal volume reduction, and achieve the effect of suppressing color mixing and improving sensitivity

Inactive Publication Date: 2015-06-10
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In an image sensor, as the pixel area becomes smaller, the amount of light incident on the pixel becomes smaller, so the amount of signal decreases and the signal-to-noise ratio (SNR) deteriorates

Method used

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Experimental program
Comparison scheme
Effect test

no. 1 approach

[0038] figure 1 It is a block diagram showing a schematic configuration of the solid-state imaging device according to the first embodiment.

[0039] exist figure 1 Among them, the solid-state imaging device is provided with: a pixel array section 1 in which pixels PC storing photoelectrically converted charges are arranged in a matrix in the row direction and in the column direction; and a vertical scanning circuit 2 in the vertical direction to be read out Column ADC circuit 3 detects the signal components of each pixel PC through CDS; horizontal scanning circuit 4 scans the pixel PC to be read out along the horizontal direction; timing control circuit 5 scans each pixel PC The timing of reading and accumulation of the PC is controlled; and the reference voltage generating circuit 6 outputs the reference voltage VREF to the column ADC circuit 3 . In addition, the master clock MCK is input to the timing control circuit 5 .

[0040] Here, in the pixel array section 1, a hor...

no. 2 approach

[0071] Figure 10 (a) is a plan view showing an example of the layout of the color filter of the solid-state imaging device according to the second embodiment, Figure 10 (b) is a plan view showing an example of the layout of the microlenses of the solid-state imaging device according to the second embodiment.

[0072] exist Figure 10 In (a), in this solid-state imaging device, the image 3 The composition of the increased light-shielding film SH. In addition, the material of the light shielding film SH may be a resin containing carbon or the like, or a metal such as aluminum or tungsten. Here, the light-shielding film SH can be arranged so as to cover the lead-out portion that leads the pixel B for blue arranged below the pixel R for red to the front side. As a result, in the backside illumination type CMOS sensor, it is possible to suppress red light from entering the blue pixels B, and to reduce color mixing.

[0073] In addition, in Figure 10 In (b), on the magenta...

no. 3 approach

[0077] Figure 12 (a) is a plan view showing an example of the layout of the color filter of the solid-state imaging device according to the third embodiment, Figure 12 (b) is a plan view showing another layout example of the color filter of the solid-state imaging device according to the third embodiment.

[0078] exist Figure 12 In (a), in this solid-state imaging device, instead of image 3 A magenta filter Mg is provided, and a white filter W is arranged on the red pixel R and the blue pixel B. Thereby, the light loss due to the magenta filter Mg can be reduced, and the sensitivity can be increased.

[0079] In addition, in Figure 12 In (b), in this solid-state imaging device, the Figure 12 The structure of (a) adds the light-shielding film SH. Figure 12 The light-shielding film SH of (b) can be combined with Figure 10 The light-shielding film SH of (a) is arranged in the same manner.

[0080] Figure 13 means along Figure 12 (a) A cross-sectional view of ...

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Abstract

According to one embodiment, a pixel array unit includes a matrix of first and second two-pixel green photoelectric conversion layers that are arranged obliquely with respect to a column direction, a two-pixel blue photoelectric conversion that is arranged adjacent to the first and second green photoelectric conversion layers, and a red photoelectric conversion layer that overlaps the blue photoelectric conversion layer in a depth direction. A green filter that is provided consecutively for two pixels on the first and second green photoelectric conversion layers, and a magenta filter or a white filter is provided consecutively for two pixels on the blue photoelectric conversion layer.

Description

[0001] Reference to Related Application: This application enjoys the benefit of priority from Japanese Patent Application No. 2013-254037 filed on December 9, 2013, the entire contents of which are incorporated herein by reference. technical field [0002] The present invention generally relates to a solid-state imaging device. Background technique [0003] In recent years, there has been a demand for thinning and high-resolution camera modules mounted on cellular phones and the like. In response to thinning and high-resolution camera modules, the miniaturization of pixels of image sensors is progressing. In an image sensor, as the pixel area becomes smaller, the amount of light incident on the pixel becomes smaller, so that the signal amount decreases and the signal-to-noise ratio (SNR) deteriorates. Therefore, it is desired for an image sensor to achieve high sensitivity by improving light utilization efficiency. SUMMARY OF THE INVENTION [0004] The problem to be solv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14603H01L27/1461H01L27/14612H01L27/14621H01L27/14627H01L27/1464H01L27/14641H01L27/14647H04N25/77H04N25/134
Inventor 江川佳孝山下浩史下村亚衣
Owner KK TOSHIBA
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