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A kind of through silicon hole etching method

A technology of through-silicon vias and silicon materials, which is applied in the direction of discharge tubes, electrical components, semiconductor/solid-state device manufacturing, etc., and can solve some existing problems

Active Publication Date: 2018-08-07
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Applying this high-low switching pulse-shaped power output method can significantly reduce the occurrence of the Notch phenomenon, but after using this method, the notch is obviously reduced but still partially exists

Method used

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  • A kind of through silicon hole etching method
  • A kind of through silicon hole etching method
  • A kind of through silicon hole etching method

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Embodiment Construction

[0016] Please refer to figure 1 Understanding the structure of the plasma etching device of the present invention, the present invention, etc., the ion etching device includes a plasma reaction chamber 100, the reaction chamber includes a base 120, and the base includes a lower electrode. An electrostatic chuck 121 is fixed on the top of the base, and the substrate to be processed is arranged on the electrostatic chuck. An adjustment ring 105 surrounds the electrostatic chuck 121 or the periphery of the substrate 122. The design of the material, shape and size of the adjustment ring can improve the stability of the substrate. The electric field distribution in the edge area of ​​the wafer can be improved to improve the etching uniformity. The top of the reaction chamber 100 includes an insulating window made of insulating material to seal the reaction top. There is at least one group of inductance coils above the insulating window, which are connected to a high-frequency rad...

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Abstract

A silicon through-hole etching method aims at reducing a concave opening on the side wall of a silicon through-hole and comprises the steps: placing a to-be-processed substrate on a pedestal in a reaction chamber, wherein the to-be-processed substrate comprises an insulating material layer and a silicon material layer above the insulating material layer, and an opening of a graphic mask layer is included above the silicon material layer; introducing a reaction gas to the reaction chamber, applying source radio-frequency power to the reaction chamber to form plasmas, etching downward from the opening of the graphic mask layer so as to form the silicon through-hole; and outputting biased radio-frequency power to the pedestal by means of a biased radio-frequency power supply; the silicon through-hole etching method is characterized in that the biased radio-frequency power of at least one stage is of a pulse type; the output power is switched between a high-power output step and a low-power output step; and the duty ratio of the biased radio-frequency power pulse is smaller than 10%.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a deep silicon (TSV) via hole etching method. Background technique [0002] In recent years, computers, communications, automotive electronics, aerospace industry and other consumer products have put forward higher requirements for microelectronic packaging, that is, smaller, thinner, lighter, high reliability, multi-function, low power consumption and low Cost, it is necessary to prepare many vertical interconnection vias on the silicon wafer to realize the electrical interconnection between different chips. The through-silicon via etching process has gradually become an important technology in the field of micro-nano processing. As micro-electromechanical devices and micro-electromechanical systems (MicroElectromechanical System, MEMS) are more and more widely used in the fields of automobiles and power electronics, as well as TSV (Through Silicon Via) throu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01J37/32
CPCH01J37/32H01L21/76805
Inventor 罗伟义刘身健刘晓波黄智林倪图强
Owner ADVANCED MICRO FAB EQUIP INC CHINA