Charge pump circuit

A charge pump and circuit technology, applied in electrical components, conversion equipment without intermediate conversion to AC, output power conversion devices, etc., can solve problems such as small boost voltage

Inactive Publication Date: 2015-07-29
LAPIS SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these charge pumps have a problem that the output negative boost voltage is smaller in absolute value than the positive boost voltage.

Method used

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Examples

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Embodiment 1

[0020] figure 1 It is a circuit diagram showing the configuration of the charge pump circuit 10 of the first embodiment. The charge pump circuit 10 has a boost line (boost line) BL having a first potential input terminal Vpi to which a first potential (such as a power supply potential Vcc) is input and a second potential (such as a ground potential Gnd) to which a second potential is input. ) of the second potential input terminal Vni. In this embodiment, the first potential input terminal Vpi is a power supply potential input terminal, and the second potential input terminal Vni is a ground potential input terminal.

[0021] The charge pump circuit 10 has a pump cell group PS connected in series between a power supply potential input terminal Vpi and a ground potential input terminal Vni of the boost line BL and composed of a plurality of pump cells PS1 and PS2 . In this embodiment, a case where the pump unit group PS is composed of two pump units PS1 and PS2 will be descri...

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Abstract

A charge pump circuit includes a first potential input terminal for receiving a first potential; a second potential input terminal for receiving a second potential; a pump cell group formed of a plurality of pump cells and connected in series between the first potential input terminal and the second potential input terminal; and a negative voltage boosting capacitor connected to a first connection node between the first potential input terminal and a forefront stage pump cell of the pump cell group. Each of the pump cells is configured to increase a boosted voltage using a transistor operating in synchronization with a clock signal input through a capacitor.

Description

technical field [0001] The present invention relates to charge pump circuits, and in particular to charge pump circuits for boosting a supply potential. Background technique [0002] In a nonvolatile semiconductor storage device that electrically performs data writing and erasing, in order to perform data writing and erasing, a positive voltage higher than a power supply potential or a higher voltage is applied to a memory cell (memory cell). negative voltage. For example, a positive high voltage is used when writing data into a memory cell, and a negative high voltage is used when erasing. A booster circuit using a charge pump is known as a means for generating the positive high voltage and the negative high voltage. [0003] Patent Document 1 discloses a high-voltage generating circuit that outputs a positive high voltage and a negative high voltage by switching the on state and the off state of two switches. Also, Patent Document 2 discloses a charge pump that outputs ...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): H02M3/07
CPCH02M3/07H02M3/071
Inventor小川绚也
OwnerLAPIS SEMICON CO LTD