Nonvolatile frequency-adjustable noise interference suppressor and preparation method thereof

Abstract

The invention belongs to the technical field of electronic devices and specifically relates to a nonvolatile frequency-adjustable noise interference suppressor and a preparation method thereof. The nonvolatile frequency-adjustable noise interference suppressor comprises a PZT substrate, upper and lower electrodes plated on two surfaces of the PZT substrate and a ferrite diaphragm prepared on the electrode. The PZT substrate comprises defect dipoles, and the thickness is 0.25 mm-1 mm. The thickness of the lower electrode is 10 nm-500 [mu]m. The thickness of the upper electrode is 10-500 nm. The component of the ferrite diaphragm is Ni0.27Zn0.1Fe2.63O4 and is deposited on the upper electrode of the PZT substrate by a spin-coating method at a low temperature of 90 DEG C, the resistivity is 106 [omega]*cm, and the thickness is 1-10 [mu]m. In use, the ferrite diaphragm side of the noise interference suppressor covers a micro-strip or a coplanar waveguide transmission line, only ensuring that the upper and lower electrodes of the PZT substrate does not contact the electrode of the transmission line. The nonvolatile frequency-adjustable noise interference suppressor has the advantages that the interference suppression effect is good, the usage is convenient, the energy is saved, and the central frequency is continuous and adjustable.

Description

technical field [0001] The invention belongs to the technical field of electronic devices, and in particular relates to a noise interference suppressor capable of adjusting the center frequency of interference suppression through voltage pulse non-volatile adjustment and a preparation method thereof. Background technique [0002] The increase in the operating frequency of modern electronic devices and the increase in the integration of electronic products have greatly enhanced the interference of high-frequency electromagnetic noise in electronic signal transmission lines. These high-frequency noise interferences are superimposed on the useful signal, which not only reduces the signal-to-noise ratio of the transmitted signal, but also reduces the effective transmission rate, and the high-frequency noise interference will also emit electromagnetic radiation into the air during the transmission process, further generating high-frequency radiation interference . Therefore, we ...

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Problems solved by technology

[0004] However, there are still two problems in the current thin-film noise suppressor: first, after the processing of the noise suppressor is completed, its size, thickness and performance of the magnetic film have been fixed, and the center frequency of its interference suppression has also been fixed. , can no longer be adjusted later

If the noise interference frequency band on the transmission signal line changes or the application occasion changes, the application effect of the noise interference suppressor will be greatly reduced

Second, many magnetic films are made of metal soft magnetic film materials. Not only are the films thin (generally less than 200 nanometers), the interference suppression effect is poor, but also insulation treatment is required to prevent the magnetic film from causing a short circuit in the transmission line.

In addition, magnetron sputtering ferrite film is also used as the magnetic layer, but the same film layer is thin (generally less than 200 nanometers), the interference suppression effect is poor, and the ferrite film needs to be annealed at high temperature. Chemical treatment, not only consumes energy, but also has high requirements on substrate quality

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