A Miniaturized Low Profile Broadband Dual Circularly Polarized Microstrip Antenna

A dual circularly polarized, microstrip antenna technology, applied in the fields of communication and navigation, can solve the problems of increased antenna height, lack of broadband characteristics, and deterioration of antenna circular polarization characteristics, and achieves reduced quality factor, circular polarization, etc. Good performance and the effect of broadening the working frequency band

Active Publication Date: 2018-06-12
NO 54 INST OF CHINA ELECTRONICS SCI & TECH GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] After patent retrieval, the relevant patents closely related to the present invention are as follows: Patent No.: CN200810114878.2, circular polarization broadband capacitance compensation probe feed stacked microstrip antenna array, through stacked structure and capacitance compensation probe technology Achieved a standing wave bandwidth greater than 20%, but only achieved single circular polarization; patent number: CN201010521963.8, a single-feed wideband circularly polarized laminated microstrip antenna and its feeding device, realized through a laminated structure 15.6% of the 3dB axial ratio bandwidth, and the antenna height > 0.14λ 0 ;Patent No.: CN201310444387.5, UHF frequency band dual-band circularly polarized low-profile air microstrip antenna, capable of dual-band operation, without broadband characteristics; Patent No.: CN201420045812.3, high-bandwidth dual-polarized microstrip antenna, The working frequency band of the antenna is 5150-5850MHz, less than 13%, and it is linearly polarized; patent number: CN201420167391.1, a broadband dual circularly polarized microstrip antenna, which can realize dual circularly polarized work, and the standing wave bandwidth reaches 56.5 % But the axial ratio of circular polarization in the frequency band has reached 6dB; patent number: CN201420206459.2, dual circularly polarized microstrip antenna with wide bandwidth angular scanning, its 3dB bandwidth is greater than 40%, and the axial ratio in the frequency band is less than 3dB, but the antenna height Has reached 0.42λ 0 , far from meeting the requirements of low profile
[0004] To sum up, it is easy to realize in engineering to widen the working bandwidth of microstrip antenna by adopting some technical measures, but it often brings problems such as deterioration of the circular polarization characteristics of the antenna and increase of the antenna height.

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  • A Miniaturized Low Profile Broadband Dual Circularly Polarized Microstrip Antenna
  • A Miniaturized Low Profile Broadband Dual Circularly Polarized Microstrip Antenna
  • A Miniaturized Low Profile Broadband Dual Circularly Polarized Microstrip Antenna

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Embodiment Construction

[0029] The present invention will be further described below in conjunction with the accompanying drawings.

[0030] A miniaturized low-profile broadband dual circularly polarized microstrip antenna, such as figure 1 As shown, it is a layered structure. The miniaturized low-profile broadband dual-circularly polarized microstrip antenna 1 is arranged sequentially from top to bottom: a first dielectric substrate 3, a metal support frame 7, a second dielectric substrate 8 and a third dielectric substrate 10, such as figure 2 As shown; the first dielectric substrate 3 is composed of an upper copper clad layer, an intermediate dielectric and a lower copper clad layer; the second dielectric substrate 8 is composed of an upper surface copper clad layer and a dielectric plate; the third dielectric substrate 10 is composed of an upper copper clad layer, a middle strip-shaped The wire, the lower copper-clad layer and two layers of dielectric, the upper copper-clad layer and the middle...

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Abstract

The invention discloses a miniaturized low-profile wide-band dual circularly polarized microstrip antenna. The antenna is composed of a first dielectric substrate, a metal support frame, a second dielectric substrate and a third dielectric substrate. There are parasitic metal patches on the upper and lower surfaces of the first dielectric substrate, and the size of the patch on the upper surface is larger than that of the patch on the lower surface, and the two are connected through 4 metallized through holes; there is a feed patch on the upper surface of the second dielectric substrate; Tri-dielectric substrate includes 4 striplines, 90° bridge, 2 feed probes and 2 RF coaxial connectors. The present invention adopts 90° electric bridge and double feed point technology to realize dual circular polarization, comprehensively adopts laminated structure and double parasitic patch structure connected by metallized through holes to widen the bandwidth of microstrip antenna, so that the antenna bandwidth can reach 19.4%, and The ratio of the circular polarization axis in the frequency band is less than 1.3dB; it has the characteristics of miniaturization and low profile, and the volume is 0.45λ0×0.45λ0×0.075λ0.

Description

technical field [0001] The invention relates to antenna technology in the field of communication and navigation, in particular to a miniaturized low-profile wide-band dual circularly polarized microstrip antenna. The invention is suitable as an array element of a phased array antenna, so it is suitable for occasions requiring relatively high bandwidth and circular polarization performance in vehicle-mounted, airborne and other low-profile satellite mobile communications. Background technique [0002] Microstrip antenna has the advantages of low profile, light weight and low cost, etc., but its inherent narrow-band characteristics (generally less than 5% relative bandwidth) limit its application range. People have adopted many techniques to widen the bandwidth of the microstrip antenna, such as the use of irregular metal patch, laminated structure and other measures. However, it is difficult to design with irregular metal patches, and often affects the polarization performan...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01Q1/38H01Q1/50H01Q1/12
CPCH01Q1/12H01Q1/38H01Q1/50
Inventor 张宙韩国栋王焕菊何应然张领飞肖松武伟贾丹卢炜丁宁陈斌
Owner NO 54 INST OF CHINA ELECTRONICS SCI & TECH GRP
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