A kind of invisible light-emitting diode and its manufacturing method

A light-emitting diode and visible light technology, applied in the field of optoelectronics, can solve the problems of serious light absorption, inability to manufacture high-brightness chips, and reduced optical power, and achieve the effect of solving the phenomenon of red burst

Active Publication Date: 2017-12-22
TIANJIN SANAN OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is still a problem with this structure: because the thickness of the light-absorbing layer needs to be above 0.1um, and if the thickness is too large, it will cause serious light absorption and greatly reduce the optical power.
Moreover, this structure cannot produce high-brightness chips, and cannot meet the current market demand for security systems.

Method used

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  • A kind of invisible light-emitting diode and its manufacturing method
  • A kind of invisible light-emitting diode and its manufacturing method
  • A kind of invisible light-emitting diode and its manufacturing method

Examples

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Embodiment 1

[0029] Please refer to the attached figure 1 An epitaxial structure of a light-emitting diode implemented according to the present invention includes: a growth substrate 100, an etching stop layer 111, an N-type ohmic contact layer 112, an N-type current diffusion layer 113, an N-GaAs visible light absorption layer 114, and an N-type The capping layer 115, the light emitting layer 116, the P-type capping layer 117, and the P-type ohmic contact layer 118.

[0030] Specifically, the growth substrate 100 is made of GaAs; the etching stop layer 111 is made of N-InGaP; the material of the N-type ohmic contact layer 112 is GaAs; the N-type current diffusion layer 113 is made of n-AlGaAs, and the doping concentration is at least 7E17 , The preferred value is 1E18, the doping material can be Si, Te, the thickness is at least 1 micron or more, and the preferred value is 7 microns; the N-GaAs visible light absorption layer 114 is doped with Si, the doping concentration is less than 7E17, an...

Embodiment 2

[0042] Please see Figure 7 In this embodiment, the N-type covering layer 115 is composed of the first covering layer 115a and the second covering layer 115b. By changing the component energy levels of the first and second covering layers, the electrons in the covering layer and visible light can be reduced. The energy level barrier of the absorber interface to obtain a lower voltage value. Preferably, the first covering layer Al X Ga 1-X The Al composition X of As is 15%, and the doping concentration is 6E17; the second covering layer Al Y Ga 1-Y The Al composition Y of As is 35%, and the doping concentration is 1E18.

[0043] The above embodiments take the first type of covering layer as an N-type covering layer and the second type of covering layer as an example of a P-type covering layer. It should be noted that the present invention is also applicable to the first type of covering layer being a P-type semiconductor layer. For the light-emitting diode device structure, corre...

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Abstract

An invisible-light light-emitting diode includes an N-type ohmic contact semiconductor layer, an N-type current spreading layer, an N—GaAs visible-light absorption layer, an N-type cladding layer, a light-emitting layer, a P-type cladding layer and a P-type ohmic contact semiconductor layer. In the invisible-light light-emitting diode, the absorption layer is GaAs, which can effectively remove all visible light when current density is >1 A / mm2, and essentially all visible light when current density is below 3 A / mm2. This effectively solves the red dot effect of invisible-light light-emitting diodes.

Description

Technical field [0001] The invention belongs to the field of optoelectronic technology, and particularly relates to an invisible light emitting diode and a manufacturing method thereof. Background technique [0002] At present, the red burst phenomenon is common in invisible light LED chips: when the light is on, the human eye is used to observe the chip's luminous condition, and part of the deep red light will be seen from the chip, which limits the application of pure infrared light without red burst. , So the market currently needs an invisible light chip without visible light. [0003] Chinese Patent Application Publication CN1758457A discloses an infrared light-emitting diode. Since the band gap of the light absorbing layer is wider than that of the active layer, the red light can be reduced by absorbing the component at the edge of the shorter wavelength side of the radiation spectrum. The effect of weight. However, this structure still has a problem: because the thickness ...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L33/02H01L33/44H01L33/30H01L33/00
CPCH01L33/0062H01L33/02H01L33/30H01L33/44H01L2933/0025H01L33/04H01L33/005
Inventor吴超瑜吴俊毅黄俊凯王笃祥
OwnerTIANJIN SANAN OPTOELECTRONICS