Invisible light emitting diode and fabrication method thereof

A light-emitting diode and visible light technology, applied in the field of optoelectronics, can solve the problems of serious light absorption, unable to make high-brightness chips, unable to meet the market demand of security systems, etc., to achieve the effect of solving the red explosion phenomenon

Active Publication Date: 2016-08-10
TIANJIN SANAN OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is still a problem with this structure: because the thickness of the light-absorbing layer needs to be above 0.1um, and if the thickness is too large, it will cause serious light absorption and greatly reduce the optical power.
Moreover, this structure cannot produce high-brightness chips, and cannot meet the current market demand for security systems.

Method used

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  • Invisible light emitting diode and fabrication method thereof
  • Invisible light emitting diode and fabrication method thereof
  • Invisible light emitting diode and fabrication method thereof

Examples

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Embodiment 1

[0029] Please see attached figure 1 , an epitaxial structure of a light emitting diode implemented according to the present invention, comprising: a growth substrate 100, an etch stop layer 111, an N-type ohmic contact layer 112, an N-type current diffusion layer 113, an N-GaAs visible light absorbing layer 114, an N-type Covering layer 115 , light emitting layer 116 , P-type covering layer 117 and P-type ohmic contact layer 118 .

[0030] Specifically, the growth substrate 100 is made of GaAs material; the etching stop layer 111 is made of N-InGaP material; the material of the N-type ohmic contact layer 112 is GaAs; the N-type current diffusion layer 113 is made of n-AlGaAs, and the doping concentration is at least 7E17 , the preferred value is 1E18, the doping material can be Si, Te, the thickness is at least 1 micron, the preferred value is 7 microns; the N-GaAs visible light absorbing layer 114 is doped with Si, the doping concentration is less than 7E17, and its thickness...

Embodiment 2

[0042] Please see Figure 7 , in this embodiment, the N-type cladding layer 115 is composed of the first cladding layer 115a and the second cladding layer 115b. By changing the energy levels of the components of the first and second cladding layers, the electrons in the cladding layer and visible light can be reduced. The interface of the absorbing layer can be level barrier to obtain a lower voltage value. Preferably, the first cladding layer Al X Ga 1-X The Al composition X of As is 15%, and the doping concentration is 6E17; the first cladding layer Al Y Ga 1-Y The Al composition X of As is 35%, and the doping concentration is 1E18.

[0043] In the above embodiments, the first type of cladding layer is an N-type cladding layer, and the second type of cladding layer is a P-type cladding layer. It should be noted that the present invention is also applicable to the case where the first type of cladding layer is a P-type semiconductor layer. The device structure of the lig...

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Abstract

The present invention discloses an invisible light emitting diode and a fabrication method thereof, the light emitting diodes includes: an N type ohmic contact semiconductor layer, an N type current diffusion layer, an N-GaAs visible light absorption layer, an N type covering layer, a light-emitting layer, a P type covering layer and a p-type ohmic contact semiconductor layer. The invisible light emitting diode of the present invention uses GaAs as the absorption layer, in a case of a current density more than 1A / mm2, the visible light part can be completely removed, especially in a case of a current density of 3A / mm2, the visible light part cannot be observed, thus the red detonation phenomenon of the invisible light emitting diode can be effectively solved.

Description

technical field [0001] The invention belongs to the technical field of optoelectronics, and in particular relates to an invisible light-emitting diode and a manufacturing method thereof. Background technique [0002] At present, there is a common red burst phenomenon in invisible light-emitting diode chips: when the chip is lit up, use the human eye to observe the chip's luminous status, and you will see part of the deep red light emitted from the chip, which limits the demand for pure infrared light without red burst in applications. , so the market currently needs an invisible light chip with no visible light. [0003] Chinese patent application publication CN1758457A discloses an infrared light-emitting diode. Since the bandgap of the light-absorbing layer is wider than that of the active layer, red light can be reduced by absorbing components at the edge of the shorter wavelength side of the radiation spectrum. weight effect. However, there is still a problem with this...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L33/02H01L33/44H01L33/30H01L33/00
CPCH01L33/0062H01L33/02H01L33/30H01L33/44H01L2933/0025H01L33/04H01L33/005
Inventor吴超瑜吴俊毅黄俊凯王笃祥
OwnerTIANJIN SANAN OPTOELECTRONICS