Pixel internal memory unit, pixel internal data storage method and pixel array

A technology of internal storage and data latching, applied in the direction of nonlinear optics, static indicators, instruments, etc., can solve the problems of complex process, limit the compatibility and application range of MIP display technology, increase the cost of MIP display technology products, etc.

Active Publication Date: 2017-01-04
BOE TECH GRP CO LTD +1
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Problems solved by technology

[0003] However, the current MIP display technology is basically a CMOS LTPS process, and the memory cells in the pixels in the MIP display technology are all composed of CMOS circuits. This process is complex and has a low yield rate, which greatly increases the cost of MIP display technology products and limits Process compatibility and application range of MIP display technology

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  • Pixel internal memory unit, pixel internal data storage method and pixel array
  • Pixel internal memory unit, pixel internal data storage method and pixel array
  • Pixel internal memory unit, pixel internal data storage method and pixel array

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[0065] According to the first embodiment of the present invention, the storage unit MIP in the pixel is composed of NMOS transistors, and according to the second embodiment of the present invention, the storage unit MIP in the pixel is composed of PMOS transistors.

[0066] Figure 6A According to the first embodiment of the present invention Figure 3B The schematic circuit diagram of the in-pixel memory cell MIP is shown. In the first embodiment of the present invention, the active levels of the first control signal and the second control signal are high level, and the active level of the driving node M is also high level.

[0067] Such as Figure 6A As shown, the data input circuit includes a first input transistor T11 and a second input transistor T12.

[0068] The gate of the first input transistor T11 is connected to the first control signal terminal S1, the first pole is connected to the data line DATA, and the second pole is connected to the first data latch termina...

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Abstract

The invention discloses a pixel internal memory unit, a data storage method, and a pixel array. The pixel internal memory unit includes a data input circuit, a first data latch circuit, a second data latch circuit, a driving control circuit and a driving circuit. The data input circuit enables a digital voltage of a data line to be applied over a first data latch end and a second data latch end when a first control signal of a first control signal end is at an active level. The first data latch circuit is configured to maintain the level of the first data latch end. The second data latch circuit is configured to maintain the level of the second data latch end. The driving control circuit is configured to enable the level of a driving node to be opposite to the level of the first data latch end. The driving circuit is configured to output a third power voltage of a third power voltage end to an output end when the driving node is at an active level thereof, and outputs a fourth power voltage of a fourth power voltage end to the output end when the second data latch end is at an active level thereof.

Description

technical field [0001] The present invention relates to storage of data voltage in a pixel, and more particularly to a storage unit in a pixel, a method for storing data in a pixel, and a pixel array. Background technique [0002] At present, with the development of technologies such as smart wear and mobile applications, higher requirements are put forward for the development of ultra-low power consumption liquid crystal LCD display technology. Memory in Pixel (MIP) display technology, as a new type of low-power LCD display technology, has broad development prospects due to its characteristics of no need to change the LCD process, no need to develop new materials, simple structure, and low cost. [0003] However, the current MIP display technology is basically a CMOS LTPS process, and the memory cells in the pixels in the MIP display technology are all composed of CMOS circuits. This process is complex and has a low yield rate, which greatly increases the cost of MIP displa...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): G09G3/36
CPCG09G3/3688G09G3/3696G09G3/3648G09G2300/0857G02F1/13306G02F1/1343G09G3/36G09G2310/0264
Inventor谭文陈佳
OwnerBOE TECH GRP CO LTD