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A kind of electro-magnetically controlled structure based on ndfeb and its preparation method and application

An electric control and magnetic effect technology, applied in the manufacture/processing of electromagnetic devices, material selection, etc., can solve problems such as the influence of ferroelectric properties, the influence of NdFeB phase formation, and the difficulty of NdFeB thin films

Active Publication Date: 2019-04-05
INST OF PHYSICS - CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as we all know, NdFeB is easy to oxidize and lose its permanent magnetic properties, and it is difficult to grow a film with good permanent magnetic properties on an oxide substrate.
Although PMN-PT has good inverse piezoelectric properties, in addition to the problem of lattice matching, the direct growth of NdFeB film will also cause interfacial reactions, which will affect the phase formation of NdFeB, and it is easy to decompose and gasify PtO at high temperature. 2 , not only its own ferroelectric properties will be affected, but also it will make it more difficult to obtain hard magnetic NdFeB films that require high temperature annealing

Method used

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  • A kind of electro-magnetically controlled structure based on ndfeb and its preparation method and application
  • A kind of electro-magnetically controlled structure based on ndfeb and its preparation method and application
  • A kind of electro-magnetically controlled structure based on ndfeb and its preparation method and application

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] The composition of the NdFeB target is: Nd x Fe 89-x B 11 (x=12),

[0060] The annealing conditions are: 700°C, annealing for 3min,

[0061] The composition of the heterojunction is: Ta(100nm) / NdFeB(200nm) / Ta(0nm) / PMN-PT(111).

Embodiment 2

[0063] The composition of the NdFeB target is: Nd x Fe 89-x B 11 (x=20),

[0064] The annealing conditions are: 700°C, annealing for 3min,

[0065] The composition of the heterojunction is: Ta(100nm) / NdFeB(200nm) / Ta(10nm) / PMN-PT(001).

Embodiment 3

[0067] The composition of the NdFeB target is: Nd x Fe 89-x B 11 (x=16),

[0068] The annealing conditions are: 700°C, annealing for 1min,

[0069] The composition of the heterojunction is: Ta(100nm) / NdFeB(200nm) / Ta(10nm) / PMN-PT(011).

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Abstract

The invention provides a magnetoelectric coupling heterojunction structure and its preparation method and application. The heterojunction structure sequentially includes: PMN-PT single crystal substrate, Ta buffer layer, NdFeB layer and Ta covering layer. The heterojunction structure of the present invention is a brand-new heterojunction of multiferroic compound with hard magnetic alloy as ferromagnetic layer. Due to its good hard magnetism and strong inverse magnetoelectric coupling effect, the heterojunction is widely used in magnetic recording, high-sensitivity magnetoelectric weak signal detectors, micro permanent magnet materials with adjustable magnetic energy product, sensors, logic devices, electronic control devices, etc. Magnetic recording and other aspects have potential application value.

Description

technical field [0001] The invention relates to a heterojunction structure with permanent magnetic properties and reverse magnetoelectric coupling properties, a preparation method and application thereof. Background technique [0002] Magnetoelectric coupling or inverse magnetoelectric coupling effect refers to the change of the electrical polarization state of the substance caused by the application of a magnetic field in a certain material or the change of the magnetization state of the substance caused by the application of an electric field, that is, the realization of magnetism and electricity in the same material. coupling. From the perspective of the traditional realization mechanism of ferroelectricity and ferromagnetism, it is very difficult to realize both in the same material and produce a coupling effect at the same time. Existing single-phase materials with magnetoelectric coupling include BiFeO 3 、Cr 2 o 3 , TbMnO 3 , YMnO 3 and MnWO 4 Wait. There are r...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/10H01L43/12H10N50/01
CPCH10N50/85H10N50/01
Inventor 刘瑶胡凤霞章明沈斐然王晶张健苏浩苏艳峰孙继荣沈保根
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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