Voltage maintaining circuit applied to memory, memory and electronic equipment

A voltage maintenance, memory technology, applied in the field of electronics, can solve problems such as reducing the voltage maintenance circuit

Active Publication Date: 2017-10-20
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The technical problem solved by the present invention is to reduce the p

Method used

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  • Voltage maintaining circuit applied to memory, memory and electronic equipment
  • Voltage maintaining circuit applied to memory, memory and electronic equipment
  • Voltage maintaining circuit applied to memory, memory and electronic equipment

Examples

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Example Embodiment

[0030] As mentioned in the background art section, the voltage maintenance circuit in the prior art memory is faced with the problem that low power consumption characteristics and easy-to-control output voltage characteristics cannot be compromised.

[0031] The inventor of this application analyzed the prior art. figure 1 It is a circuit diagram of an existing voltage maintenance circuit for memory; the memory can be SRAM, because the data is not lost after SRAM is powered on, and the data stored in it can be saved without refreshing the circuit, which is required in SRAM A voltage is maintained to ensure that the internal data is not lost. Such as figure 1 As shown, the voltage maintenance circuit 100 for the memory may include a bandgap reference source (Bandgap) 10, a voltage comparator 20, a voltage divider circuit composed of a resistor R1 and a resistor R2, and a PMOS switch tube P1, wherein the voltage divider The circuit has a voltage dividing node A, and the voltage out...

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PUM

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Abstract

The invention discloses a voltage maintaining circuit applied to a memory, the memory and electronic equipment. The voltage maintaining circuit applied to the memory comprises a charge-discharge circuit and a voltage holding circuit, wherein the first end of the charge-discharge circuit is connected with a power source through a first switching circuit, and the first switching circuit is switched on or off under the action of a first control signal; and the first end of the voltage holding circuit is connected with the output end of the voltage maintaining circuit and connected with the first end of the charge-discharge circuit through a second switching circuit, and the second switching circuit is switched on or off under the action of a second control signal, wherein the on-off state of the first switching circuit and the on-off state of the second switching circuit are opposite, when the first switching circuit is switched on, the power source charges the charge-discharge circuit, and when the second switching circuit is switched on, the charge-discharge circuit discharges the voltage holding circuit. Through the scheme, the voltage maintaining circuit applied to the memory is low in power consumption, and the precision of output voltage is easy to control.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to a voltage maintaining circuit for memory, memory and electronic equipment. Background technique [0002] In recent years, portable products have developed extremely rapidly, such as wearable devices. A wearable device is a portable device that is worn directly on the body or integrated into the user's clothing or accessories. Wearable devices are not only a hardware device, but also achieve powerful functions through software support, data interaction, and cloud interaction. Wearable devices will bring great changes to people's lives and perceptions. In portable products, a low dropout regulator (LDO for short) is usually used to power the module, but the LDO itself also consumes a current of μA level, and with the emergence of wearable devices, power Therefore, how to save power consumption will be a problem that must be solved. [0003] Wearable device hardware generally...

Claims

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Application Information

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IPC IPC(8): G11C5/14
CPCG11C5/14G11C5/147
Inventor 黄正乙杨家奇罗冬祥黄正太许瑜芳陈萍
Owner SEMICON MFG INT (SHANGHAI) CORP
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