Manufacturing method of semiconductor wafer and semiconductor element
A semiconductor and chip technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of semiconductor chip strength reduction and inability to solve trade-offs
Active Publication Date: 2020-12-04
DENSO CORP
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Problems solved by technology
If the area of the thick-walled region is reduced, the strength of the semiconductor wafer decreases
In the semiconductor wafer described in Patent Document 1, since the inclination angle is fixed in each inclined surface, the above-mentioned problem of trade-off cannot be solved.
Method used
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Embodiment Construction
[0021] In the semiconductor wafer according to one embodiment, the inclination angle of the outer peripheral portion of the inclined surface may be smaller than the inclination angle of the middle portion of the inclined surface. According to such a structure, expansion of the width dimension of an inclined surface can be suppressed, and the effect of suppressing the chip|tip on an inclined surface can be improved.
[0022] In the above-described embodiment, it is possible that the inclination angle of the inner peripheral portion of the inclined surface is equal to the inclination angle of the middle portion of the inclined surface. According to such a structure, for example, the same grinding wheel can be used to form the inner peripheral portion and the middle portion, so that the manufacturing process of the semiconductor element can be avoided from being complicated.
[0023] In the semiconductor wafer of another embodiment, it is possible that the inclination angle of th...
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The present invention provides a semiconductor wafer and a method for manufacturing a semiconductor element, the semiconductor wafer having a thick-walled region along the outer peripheral surface, the thick-walled region having a thickness thicker than that of the central region. The main surface of one side of the semiconductor wafer has an inclined surface located between the central region and the thick-walled region. The inclined surface has an inner peripheral edge on the central region side and an outer peripheral edge on the thick-walled region side, and is inclined so that the thickness of the semiconductor wafer increases from the inner peripheral edge to the outer peripheral edge. The inclined surface has an inner peripheral portion including an inner peripheral edge, an outer peripheral portion including an outer peripheral edge, and an intermediate portion located between the inner peripheral portion and the outer peripheral portion. In addition, the inclination angle of at least one of the outer peripheral portion and the inner peripheral portion is smaller than the inclination angle of the intermediate portion.
Description
technical field [0001] The technology disclosed in this specification relates to a method of manufacturing a semiconductor wafer and a semiconductor element. Background technique [0002] Japanese Patent Application Laid-Open No. 2009-279661 discloses a semiconductor wafer having a thick-walled region along an outer peripheral surface having a thickness greater than that of a central region. Such semiconductor wafers are semi-finished products produced during the manufacture of semiconductor components. In the manufacture of a semiconductor element, first, a semiconductor wafer having a uniform thickness is prepared, and a structure of a part of the semiconductor element is formed in a central region of the semiconductor wafer. Next, the central region of the semiconductor wafer is ground from one main surface side so that the semiconductor element has a desired thickness. At this time, in order to ensure the strength of the semiconductor wafer, a region along the outer pe...
Claims
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IPC IPC(8): H01L29/06H01L21/02
CPCH01L21/02021H01L29/0657H01L21/304
Inventor 柴田裕司伊藤达哉
Owner DENSO CORP