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Semiconductor wafer and method of manufacturing semiconductor element

A semiconductor and chip technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of semiconductor chip strength reduction and inability to solve trade-offs

Active Publication Date: 2018-04-17
DENSO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the area of ​​the thick-walled region is reduced, the strength of the semiconductor wafer decreases
In the semiconductor wafer described in Patent Document 1, since the inclination angle is fixed in each inclined surface, the above-mentioned problem of trade-off cannot be solved.

Method used

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  • Semiconductor wafer and method of manufacturing semiconductor element
  • Semiconductor wafer and method of manufacturing semiconductor element
  • Semiconductor wafer and method of manufacturing semiconductor element

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Embodiment Construction

[0021] In the semiconductor wafer according to one embodiment, the inclination angle of the outer peripheral portion of the inclined surface may be smaller than the inclination angle of the middle portion of the inclined surface. According to such a structure, expansion of the width dimension of an inclined surface can be suppressed, and the effect of suppressing the chip|tip on an inclined surface can be improved.

[0022] In the above-described embodiment, it is possible that the inclination angle of the inner peripheral portion of the inclined surface is equal to the inclination angle of the middle portion of the inclined surface. According to such a structure, for example, the same grinding wheel can be used to form the inner peripheral portion and the middle portion, so that the manufacturing process of the semiconductor element can be avoided from being complicated.

[0023] In the semiconductor wafer of another embodiment, it is possible that the inclination angle of th...

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Abstract

The invention provides a semiconductor wafer and method of manufacturing semiconductor element. The semiconductor wafer is provided with a thick region extending along its outer circumferential surface and being greater in thickness than its central region. A main surface of the wafer includes a slope surface located between the central region and the thick region. The slope surface has an inner circumferential edge and an outer circumferential edge, and slopes such that the thickness of the wafer increases from the inner circumferential edges to the outer circumferential edge. The slope surface includes an inner circumferential portion including the inner circumferential edge, an outer circumferential portion including the outer circumferential edge and an intermediate portion located between the inner and the outer circumferential portions. At least one of slope angles of the inner and the outer circumferential portions is smaller than a slope angle of the intermediate portion.

Description

technical field [0001] The technology disclosed in this specification relates to a method of manufacturing a semiconductor wafer and a semiconductor element. Background technique [0002] Japanese Patent Application Laid-Open No. 2009-279661 discloses a semiconductor wafer having a thick-walled region along an outer peripheral surface having a thickness greater than that of a central region. Such semiconductor wafers are semi-finished products produced during the manufacture of semiconductor components. In the manufacture of a semiconductor element, first, a semiconductor wafer having a uniform thickness is prepared, and a structure of a part of the semiconductor element is formed in a central region of the semiconductor wafer. Next, the central region of the semiconductor wafer is ground from one main surface side so that the semiconductor element has a desired thickness. At this time, in order to ensure the strength of the semiconductor wafer, a region along the outer pe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L21/02
CPCH01L21/02021H01L29/0657H01L21/304
Inventor 柴田裕司伊藤达哉
Owner DENSO CORP