High-power power electronic device applied to MMC and operation method thereof

A technology of power electronic devices and operation methods, which is applied in the field of electric power, can solve problems such as high reverse recovery current, increased volume, and large on-state loss, and achieve the effects of reducing turn-off loss, reducing overall cost, and ensuring reliability

Pending Publication Date: 2018-05-18
TSINGHUA UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] (1) The on-state voltage drop is high, resulting in large on-state losses;
[0005] (2) After the modular IGBT device fails, it is in an open circuit state. In the case of series redundancy, in order to ensure that other sub-modules still work normally, it is necessary to connect bidirectional thyristors and mechanical switches in parallel at both ends of the sub-module. complex;
[0006] (3) Although the crimp-type IGBT device is in a short-circuit state after failure, it cannot guarantee the reliability of long-term short-circuit failure, and the cost

Method used

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  • High-power power electronic device applied to MMC and operation method thereof
  • High-power power electronic device applied to MMC and operation method thereof

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Embodiment Construction

[0041] The specific embodiments of the present invention will be further described in conjunction with the technical solutions of the present invention and the accompanying drawings.

[0042] The high power electronic device applied to MMC of the present invention, such as figure 1 Shown, including an insulated gate bipolar transistor IGBT device and an integrated gate commutated thyristor IGCT device. The IGBT device is connected in parallel with the IGCT device, and the voltage level of the IGBT device and the IGCT device are the same, and the current level is proportional. Among them, the collector of the IGBT device is connected in parallel with the anode of the IGCT device to lead to the positive terminal; the emitter of the IGBT device is connected in parallel to the cathode of the IGCT device to lead to the negative terminal; figure 1 As shown, this kind of power electronic device generates stray inductance 1-4 at the collector and emitter of the IGBT device and the an...

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Abstract

The invention provides a high-power power electronic device applied to an MMC and an operation method thereof. The power electronic device comprises an IGCT device and an IGBT device which are in parallel connection, and the IGCT device and the IGBT device have the equal voltage class and a certain current class proportion; furthermore, the IGCT device and the IGBT device can be sealed into a device tube shell with a special design, and therefore the stray inductance between the two devices is reduced. According to the high-power power electronic device applied to the MMC, the whole on-state voltage drop can be lowered, and the working efficiency of the MMC is improved; the loss is lowered, the size of the whole device is reduced, and the cost is lowered.

Description

technical field [0001] The invention belongs to the field of electric power technology and relates to power electronic devices, in particular to a high-power power electronic device applied to MMC. Background technique [0002] Modular multilevel converter (MMC for short) has many advantages such as very high conversion efficiency, extremely low output voltage harmonic content, small filter volume, modular characteristics, and easy installation and maintenance. It has gained widespread attention, making it very suitable for high-voltage and high-power electric energy conversion occasions. [0003] In practical applications, the key power components of the sub-modules of the MMC usually use insulated gate bipolar transistor (Insulated gate bipolar transistor, IGBT for short) devices. In the prior art, MMC based on IGBT devices has the following disadvantages: [0004] (1) The on-state voltage drop is high, resulting in large on-state losses; [0005] (2) After the modular ...

Claims

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Application Information

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IPC IPC(8): H02M7/483H02M7/155H02M7/537
CPCH02M7/155H02M7/483H02M7/537H02M1/0054Y02B70/10
Inventor 陈政宇曾嵘余占清赵彪宋强
Owner TSINGHUA UNIV
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