An infrared LED light source

A technology of LED light source and near-infrared light, which is applied in the field of infrared LED light source, can solve the problems of difficulty in obtaining high-efficiency infrared LED light source, low phosphor efficiency, low efficiency, etc., achieve high luminous brightness, improve luminous efficiency, and high emission efficiency Effect

Active Publication Date: 2020-03-31
JIANGSU BREE OPTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As mentioned above: using long-wave visible light with a wavelength of more than 590nm or short-wave ultraviolet light with a wavelength of about 300nm as the excitation source is not only very inefficient but also expensive. At the same time, it is difficult to obtain high-efficiency infrared LEDs due to the relatively low efficiency of the phosphors used. light source; and the application value of infrared light with a wavelength in the range of 780-1500nm is very high, but the existing known technologies involve few

Method used

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  • An infrared LED light source
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  • An infrared LED light source

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0076]A patch-type bracket is selected, and the blue LED chip with a wave peak range of 450-452nm is fixed in the bracket bowl cup through a crystal-bonding process, and the wire welding is completed. Weigh 5g of Zn 3 Ga 1.98 GeO 8 :Cr 0.02 After the phosphor powder is mixed with 6g of organic silica gel, it is poured into the bowl cup through the dispensing process, and then through the curing process, a patch-type infrared LED light source with a spectral coverage of 700-850nm can be obtained. The luminous brightness is 120% of that of Comparative Example 1.

Embodiment 2

[0078] The in-line bracket is selected, and the blue LED chip with a wave peak range of 450-452nm is fixed in the bracket bowl cup through the crystal bonding process, and the wire welding is completed. Weigh 3.5g of Zn 3 Ga 1.9788 GeO 8 :Cr 0.02， Nd 0.0012 After the phosphor powder is mixed with 6g of organic silica gel, it is poured into the bowl through the dispensing process, and then the in-line infrared LED light source with a spectral coverage of 700-850nm can be obtained through the curing process. The luminous brightness is 118% of that of Comparative Example 1.

Embodiment 3

[0080] A patch-type bracket is selected, and the blue LED chip with a wave peak range of 455-460nm is fixed in the bracket bowl cup through a crystal-bonding process, and the wire welding is completed. Weigh 5g of Zn 3 Ga 1.946 Ge 2 o 10 :Cr 0.054， After the phosphor powder is mixed with 8.3g of organic silica gel, it is poured into the bowl through the dispensing process, and then through the curing process, a patch-type infrared LED light source with a spectral coverage of 750-850nm and a peak wavelength of about 770nm can be obtained. The luminous brightness is 135% of that of Comparative Example 1.

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Abstract

The invention provides an infrared LED light source. The infrared LED light source includes a blue-light LED chip and fluorescent power which coasts the blue-light LED chip or is located above the blue-light LED chip; the fluorescent power emits infrared light or near-infrared light, and the structural formula of the fluorescent power is MxL(y-s-r)QzQw:Crs, Rr. By selecting the infrared light emission fluorescent powder with different spectrum structures, excited by the blue-light LED chip, near-infrared light and infrared light within a 760-1500 nm wave band are implemented, and the infrared LED light source can be applied to the fields of iris identification, remote control, infrared sensing, food detection and the like.

Description

technical field [0001] The invention relates to the field of LED lighting, in particular to an infrared LED light source. Background technique [0002] Traditional infrared emitting diodes (IR-LEDs) are mainly made of gallium arsenide (GaAs) or gallium aluminide arsenide (GaAlAs) chips, which emit infrared rays when injected electrons and holes recombine. According to the characteristics of infrared rays, infrared rays of different wavelengths have broad application prospects in many fields. For example, near-infrared light of 660-780nm can be used to promote plant growth, infrared light of 760-805nm can be used in medical and health fields, for detecting fat content, infrared light of 810nm can be used for iris recognition, and infrared light of 940nm can be used for remote control, etc. Wait. [0003] However, traditional infrared emitting diodes have had the problem of low conversion efficiency for a long time; moreover, because different application fields have special...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/50H01L33/48
CPCH01L33/48H01L33/504
Inventor 何锦华梁超符义兵
Owner JIANGSU BREE OPTRONICS CO LTD
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