A Reverse Conduction IGBT Gate Pre-Desaturation Driving Method Based on Current Threshold Judgment

A current threshold, reverse conduction technology, applied in electronic switches, electrical components, high-efficiency power electronic conversion and other directions, can solve problems such as waveform oscillation, difficulty, abnormal system operation, etc., to save power, enhance heat dissipation performance, optimize Effects of dynamic and static properties

Active Publication Date: 2019-08-27
BEIJING JIAOTONG UNIV
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Problems solved by technology

[0008] This method needs to combine the judgment of the diode mode and the accurate identification of the diode turn-off time. It involves a lot of logic timing problems, and it is difficult to implement. Once a small fault occurs in the timing logic, it may cause abnormal operation of the system, and When the current is small, the waveform is prone to oscillation

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  • A Reverse Conduction IGBT Gate Pre-Desaturation Driving Method Based on Current Threshold Judgment
  • A Reverse Conduction IGBT Gate Pre-Desaturation Driving Method Based on Current Threshold Judgment
  • A Reverse Conduction IGBT Gate Pre-Desaturation Driving Method Based on Current Threshold Judgment

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Embodiment Construction

[0046] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0047] Such as Figure 1-7 As shown, the reverse conduction type IGBT gate pre-desaturation drive circuit based on current threshold judgment in the present invention includes: reverse conduction type IGBT mode detection circuit, current detection circuit, external MOSFET drive level adjustment circuit, three-state Gate 3 and IGBT drive push-pull circuit 4;

[0048] The reverse conduction type IGBT mode detection circuit includes a voltage comparator 1, a NOT gate 7, a voltage source 8 and a collector collecting voltage module 9, wherein one end of the collector collection voltage module 9 is connected to the collector of the reverse conduction type IGBT C connection, the two input terminals of the voltage comparator 1 are respectively connected with the other end of the voltage source 8 and the collector voltage acquisition module 9, and the output terminal...

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Abstract

The invention relates to a reverse conduction type IGBT gate pre-desaturation driving method based on current threshold judgment, using an external power MOSFET in the reverse conduction type IGBT gate to achieve flexible conversion of the drive level, and the drive circuit can be monitored in real time The operation mode of the reverse conduction IGBT, and the average current flowing through the circuit is obtained through the current measurement method, so as to judge whether it is necessary to change the gate voltage to optimize the dynamic and static characteristics of the internal integrated diode of the reverse conduction IGBT, thereby reducing the three-phase The dynamic and static loss of the inverter system can improve the system efficiency. After calculation, applying this pre-desaturated gate drive circuit to the three-phase inverter can increase the system capacity by about 30% while keeping the volume unchanged. Reducing 10%-15% loss release, 1MW class three-phase inverter can save 10%-12% of electric energy.

Description

technical field [0001] The invention relates to the technical field of rail transit energy saving, in particular to a reverse conduction IGBT gate pre-desaturation driving method based on current threshold judgment. Background technique [0002] In modern rail transit traction drive systems, IGBTs are used to form a rectifier and an inverter to form an energy transfer path. The AC voltage on the transformer side is converted into a kV-level DC voltage through the traction rectifier, and the DC link is stabilized, and finally through the three-phase traction inverter. Converter into three-phase AC voltage, connected to the traction motor, so as to drive the train. Generally, the capacity of the IGBT module determines the power level of the traction converter system. The reverse conduction IGBT module replaces the traditional IGBT+ anti-parallel diode package module, which has higher power density, better system thermal characteristics, and lower loss. The traction converter ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/08H03K17/567
CPCH02M1/08H03K17/567H03K2217/0027H03K2217/0036H02M1/0054Y02B70/10
Inventor 黄先进凌超游小杰郑琼林
Owner BEIJING JIAOTONG UNIV
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