A method for manufacturing a mask plate with a micro-nano pattern structure and a nano-lithography method
A technology of graphic structure and production method, which is applied to the photolithographic process of the patterned surface, optics, and originals for photomechanical processing, etc., which can solve the problems of difficult preparation of beam pens, high production costs, and easy wear and tear.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0038] Such as figure 1 As shown, the present invention provides a method for manufacturing a polymer mask with a micro-nano pattern structure, comprising the following steps:
[0039] S101: On the silicon wafer, using a patterning process to define patterns to be etched;
[0040] S102: After step S101 is completed, perform anisotropic etching on the surface of the silicon wafer, and prepare a micro-nano pattern arrangement structure of a specific shape and a specific size on the silicon wafer by controlling the etching process;
[0041] S103: After step S102 is completed, apply the polymer solution on the surface of the silicon chip with a micro-nano pattern arrangement structure of a specific shape, and transfer the micro-nano pattern structure on the surface of the silicon chip to the polymer;
[0042] S104: After step S103 is completed, take out the transferred polymer, and the polymer with micro-nano pattern structure is used as a photolithography mask for photolithograp...
Embodiment 2
[0059] In this embodiment, on a 4-inch large-size planar substrate 31 silicon wafer, based on a mask manufacturing method with a micro-nano pattern structure and a nano-lithography process, nanowires are prepared, wherein the polymer mask 34 has a nanometer The feature size of the planar part of the pattern is smaller than the light wavelength (L<λ), which can realize the total reflection lithography exposure technology.
[0060] Such as figure 1 As shown, on the silicon wafer 12, the photolithographic patterning process is used to define the pattern 11, and the silicon wafer 12 is anisotropically etched, and a micro-nano pattern structure of a specific shape is prepared on the silicon wafer 12 to generate a micro-nano pattern. Structured silicon wafer 12 .
[0061] Coating the polymer solution on the surface of the silicon chip 12 with a micro-nano pattern structure of a specific shape, the polymer solution is a polydimethylsiloxane (polydimethylsiloxane, PDMS) solution, whe...
Embodiment 3
[0065] The embodiment of the present invention also provides a nano-dot prepared on a non-planar substrate glass rod (500 μm in diameter) based on a polymer mask with a nano-dot pattern structure and a nano-lithography process, wherein the planar part of the nano-pattern The characteristic size of is larger than the wavelength of light (L>λ).
[0066] First follow figure 1 , to prepare a polymer mask with a nano-dot pattern structure. then follow Figure 5 The process flow, on the non-planar substrate glass rod (diameter 500μm), based on the polymer mask with nano-dot pattern structure, nano-dots are prepared by nano-lithography process.
[0067] Such as Figure 5 As shown, firstly, a positive photoresist 52 is coated on the surface of a non-planar substrate glass rod 51 (500 μm), then placed on a hot plate at 120° C., and baked for 2 minutes to cure the positive photoresist 52 . A polymer mask 54 with a micro-nano pattern structure is then used as a photolithography mask....
PUM
| Property | Measurement | Unit |
|---|---|---|
| size | aaaaa | aaaaa |
| diameter | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More