Hot writing page prediction method based on memory access

A technology for memory access and prediction methods, which is applied in the input/output process of instrumentation, data processing, electrical digital data processing, etc. Longevity, avoidance of performance impairment

Active Publication Date: 2019-04-19
HARBIN INST OF TECH
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problems of low service life and performance imp...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Hot writing page prediction method based on memory access
  • Hot writing page prediction method based on memory access
  • Hot writing page prediction method based on memory access

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0029] Specific implementation mode 1: In this implementation mode, a specific process of a method for predicting hot pages written based on memory access is as follows:

[0030] Step 1. At time t, when a page P is accessed, first determine which storage medium the operation occurs in:

[0031] If it occurs in DRAM and page P is not in DRAM cache, put page P into DRAM cache and go to step 5;

[0032] If it occurs in DRAM and page P is in DRAM cache, go to step 5;

[0033] If it occurs in PCM, go to step 2;

[0034] The DRAM (Dynamic Random Access Memory) is a dynamic random access memory;

[0035] The PCM is a phase-change memory in a non-volatile memory;

[0036] Step 2. If the operation occurring in the PCM is a read operation, go to step 5;

[0037] If the operation occurring in the PCM is a write operation and the page P is not in the PCM cache, add the page P to the PCM cache and go to step 5;

[0038] If the operation occurring in the PCM is a write operation and th...

specific Embodiment approach 2

[0048] Specific embodiment two: the difference between this embodiment and specific embodiment one is that in the step 3, a replacement page is searched in the DRAM, and the specific process is:

[0049] Determine whether there are empty pages in DRAM:

[0050] If there is an empty page, the empty page in the DRAM is used as a replacement page. If there is no empty page, determine whether there is a page in the DRAM that has not been accessed:

[0051] If there is a page that has not been accessed, use the page that has not been accessed in the DRAM as a replacement page. If there is no page that has not been accessed, determine whether there are m consecutive pages that have not been accessed in the DRAM :

[0052] If there are pages that have not been accessed for m consecutive times, the pages that have not been accessed for m consecutive times in the DRAM are used as replacement pages; if there are no pages that have not been accessed for m consecutive times, then there i...

specific Embodiment approach 3

[0054] Specific embodiment 3: The difference between this embodiment and specific embodiment 1 or 2 is that 1≤m≤20.

[0055] Other steps and parameters are the same as those in Embodiment 1 or Embodiment 2.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a hot writing page prediction method based on memory access, in particular to a hot writing page prediction method based on memory access. The invention aims to solve the problems of short service life and damaged performance of the existing hybrid memory. According to the invention, the PCM cache and the DRAM cache are set; wherein the PCM access memory is used for storing a written PCM page; wherein the DRAM cache is used for storing an accessed DRAM page and time t, and when a write operation occurs in the PCM page, the page is in the PCM cache and the dirty position of the page is 1, a replacement page is searched in the DRAM or the DRAM cache, migration is started, and a counter is requested to add 1. Requesting the counter to restart counting every integer multiple of the memory reference distance, and setting all dirty bits of the page in the PCM cache to be zero. Then, t is made to be equal to t + 1, and the steps are executed again; The method is applied to the field of page write heat prediction.

Description

technical field [0001] The invention relates to a method for predicting write hot pages based on memory access. Background technique [0002] In order to meet the requirements of large capacity and low power consumption of memory in modern systems, hybrid memory composed of DRAM and non-volatile memory has been widely used. Phase Change Memory PCM (Phase Change Memory) has become a new favorite in academia and industry in non-volatile memory. Compared with traditional DRAM, PCM persistent memory has the advantages of low static power, high storage density, byte-addressable ability and high data endurance. These advantages bring great challenges and opportunities to the efficient performance of memory. Although PCM has many advantages, its high write latency and low write endurance limit the service life of PCM. In the hybrid main memory design of PCM and DRAM, the hybrid main memory makes use of the low latency and high endurance of DRAM to make up for the defects of PCM i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G06F3/06
CPCG06F3/0616G06F3/0638G06F3/0685
Inventor 王进祥牛娜付方发苑嘉才来逢昌王永生
Owner HARBIN INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap