An optimization method for improving the writing performance of 3D flash memory chips in solid state disks

A flash memory chip and optimization method technology, applied in memory systems, data processing input/output processes, instruments, etc., can solve problems such as difficulty in exerting efficiency and difficulty in increasing 2D flash memory, optimize write response time, reduce write The number of operations, the effect of reducing writes

Active Publication Date: 2022-03-01
NANCHANG HANGKONG UNIVERSITY
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, with the continuous increase of people's needs, it is limited by the limited width and length dimensions to accommodate memory cells
The capacity of 2D flash memory has reached the limit of its development, and it is difficult to continue to increase SSD capacity with 2D flash memory
The address mapping technology has been relatively mature at this stage, but it is difficult for hybrid solid-state disks to exert their true efficiency.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • An optimization method for improving the writing performance of 3D flash memory chips in solid state disks
  • An optimization method for improving the writing performance of 3D flash memory chips in solid state disks
  • An optimization method for improving the writing performance of 3D flash memory chips in solid state disks

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The implementation of the present invention will be described in detail below with reference to the drawings and examples, so as to fully understand and implement the implementation process of how to use technical means to solve technical problems and achieve technical effects in the present invention.

[0032] Due to the non-overwritable feature of flash memory, every time a flash memory page needs to be modified, it is necessary to find a blank flash memory page to write the modified data, and then mark the metadata page as invalid. However, due to the improvement of flash memory media, the size of a data page of the 3D-flash currently developed is generally increased from the original 4K to 16K, or even more. Since the modified length of writing data is too large to actually reach the size of a page, this idea proposes a method, using a hybrid solid-state disk with 3D-flash and MLC as storage media as a reference, and assuming a single 3D-flash data The page size is ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an optimization method for improving the writing performance of 3D flash memory chips in a solid state disk. The invention takes a hybrid solid state disk with 3D-flash and MLC as storage media as a reference, and at the same time assumes that the size of a single data page of 3D-flash is 16K And the size of a single MLC data page is 4K, this solution can make full use of the feature that the size of the write request does not reach the size of one page, thereby reducing the number of write operations of the flash memory and effectively extending the service life of the flash memory.

Description

technical field [0001] The invention relates to the technical field of solid-state disks, in particular to an optimization method for improving the writing performance of 3D flash memory chips in solid-state disks. Background technique [0002] A solid-state disk is a storage device that uses semiconductor chips to store data. It is mainly composed of peripheral circuits, semiconductor memory chips, controllers, internal caches of solid-state disks, read-only memory (ROM), host interface logic, and corresponding firmware. The ROM is used to store the firmware in the solid-state disk, the internal cache of the solid-state disk is used to smooth the speed difference between the semiconductor memory and the processor, and the controller is responsible for transmitting and processing data between the host computer and the semiconductor memory chip. At present, the semiconductor memory chip in the solid state disk is mainly flash memory. [0003] With the progress of flash memor...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G06F3/06G06F12/1009
CPCG06F3/061G06F3/0679G06F3/0644G06F12/1009
Inventor 何丹徐文何英梅圆严思香
Owner NANCHANG HANGKONG UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap