Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Phase-memory write operation method

A technology of phase change memory and write operation, which is applied in the direction of static memory, read-only memory, digital memory information, etc., can solve the problems of slow read and write speed, achieve the effect of prolonging the service life and reducing the number of write operations

Active Publication Date: 2013-03-20
TSINGHUA UNIV
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the advantages of read and write speed and low power consumption, PCM can also be used as a substitute for main memory DRAM. Compared with DRAM, PCM has the characteristics of high integration density, low power consumption, and non-volatility, but its read and write speed Slightly slower, limited number of rewritable times is still a prominent issue

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Phase-memory write operation method
  • Phase-memory write operation method
  • Phase-memory write operation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0031] The present invention provides a design for reducing the amount of data written back by using the idea of ​​data transformation. This method occurs when the data in the upper layer cache changes and needs to be written back to the storage unit of the phase change memory PCM. The following steps are mainly implemented in In the controller of phase change memory PCM. Such as figure 1 As shown, methods to reduce writeback operations include:

[0032] Step S101, performing preprocessing on the data block to be written back in the PCM storage unit to obtain the preprocessed data block, the preprocessing includes:

[0033] Invert the data block to be written bit by bit...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a PCM (pulse code modulation) write operation method. The method comprises the following steps: S1, preprocessing a data block to be written back to a PCM storage unit to acquire a preprocessed data block; S2, reading an initial data block corresponding to the data block to be written from the PCM storage unit; and S3, calculating a Hamming distance between the data block to be written or the preprocessed data block and the initial data block, selecting the data block corresponding to the minimum value of the Hamming distance to the initial data block, and writing the data block back to the initial data block, and writing a preprocessing mark back to the storage unit. The method reduces the times of write operation on the PCM storage unit, so the service life of the PCM is prolonged.

Description

technical field [0001] The invention relates to the technical field of computer storage, in particular to a write operation method of a phase-change memory. Background technique [0002] Phase Change Memory (PCM) is a new type of memory technology with great application prospects. Compared with flash memory (Flash), it has the advantages of fast read and write speed and long life. However, the storage particles of PCM also have a limited life cycle, and the number of rewritable times is 10. 8 ~10 9 Second-rate. Due to the advantages of read and write speed and low power consumption, PCM can also be used as a substitute for main memory DRAM. Compared with DRAM, PCM has the characteristics of high integration density, low power consumption, and non-volatility, but its read and write speed Slightly slower, limited rewritable times are still its salient issue. How to reduce the data written back to PCM has become an obvious method to enhance the storage life of phase change...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/56G11C16/10
Inventor 胡事民赵鹏
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com