Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Turn-off thyristor device with separate gate drive

A technology of gate drive and thyristor, which is applied in the direction of electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems affecting radiators, not conducive to flexibility, unable to directly disassemble or replace gate drives, etc. Achieve the effect of low parasitic inductance

Active Publication Date: 2020-11-06
北京清能芯研科技有限公司
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to achieve this purpose, both IGCT and ETO currently adopt the integrated close connection method of the drive circuit board and the tube case that can turn off the thyristor element. If the gate drive fails during use, it will not be possible to directly disassemble or replace the gate drive. Disassemble the turn-off thyristor device as a whole from the press-fit assembly, which greatly increases the maintenance cost of the assembly
In addition, the relative position of the bulky gate driver and the turn-off thyristor case is fixed, which is not conducive to the flexibility of the design of press-fit components for turn-off thyristor devices, and affects the design of radiators, copper bars, water cooling systems, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Turn-off thyristor device with separate gate drive
  • Turn-off thyristor device with separate gate drive
  • Turn-off thyristor device with separate gate drive

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0075] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0076] As used herein, "comprising", "comprising", "having", "containing" and so on are all open terms, meaning including but not limited to.

[0077] The term "plurality" herein includes "two" and "more than two".

[0078] Please refer to figure 2 , figure 2 It is a schematic diagram of the rigid connection structure of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a turn-off thyristor device with a separated gate drive. The turn-off thyristor device comprises a turn-off thyristor shell, an auxiliary interface board, a gate drive board and a connecting structure. The turn-off thyristor shell and the auxiliary interface board are connected in a low-inductance integrated connection mode. The gate drive board comprises a drive circuit module. The auxiliary interface board and the gate pole driving board are detachably connected through the connecting structure, so that the thyristor shell and the gate pole driving board can be disconnected or combined.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a turn-off thyristor device with separate gate drive. Background technique [0002] As a new type of large-capacity power electronic switching device, the turn-off thyristor has the advantages of low conduction voltage drop and large inrush current, and has important applications in solid-state circuit breakers, converters, power electronic transformers and other fields. IGCT and ETO are two different driving methods commonly used to turn off thyristors, and their electrical topologies are as follows: Figure 1a and Figure 1b As shown, it includes two parts that can turn off the thyristor element and the integrated gate drive. When the trigger is turned on, the drive circuit injects a trigger current of several hundred amperes to the gate (G). The trigger current needs to have a high di / dt To ensure that the chip is turned on evenly; when it is turned off, the IGCT drive...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/10H01L25/16H05K1/18
CPCH01L23/10H01L25/16H05K1/181Y02E40/30
Inventor 曾嵘陈政宇尚杰赵彪余占清刘佳鹏周文鹏
Owner 北京清能芯研科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com