Power generation circuit and display device thereof

Abstract

The invention discloses a power generation circuit and a display device thereof. The power generation circuit outputs a first voltage and transmits the first voltage to a plurality of pixels of the display panel. The first voltage has a predetermined high voltage level, the power supply generation circuit comprises a voltage output circuit and a voltage conversion circuit, the voltage output circuit outputs a second voltage, and the voltage conversion circuit is electrically connected with the voltage output circuit and outputs a first voltage according to the second voltage and a control signal; and within a period of time of the first voltage, the control signal enables the first voltage output by the voltage conversion circuit to rise to a preset high voltage level, and enables the highest voltage level of the last falling edge of the first voltage to be smaller than the preset high voltage level. The capacitive coupling effect can be effectively improved, and the display effect ismore excellent.

Description

technical field [0001] The present application relates to a power generating circuit, in particular to a power generating circuit and a display device thereof which can effectively improve the capacitive coupling effect. Background technique [0002] With the development of liquid crystal display technology, liquid crystal displays are gradually popularized. The liquid crystal display mainly uses the electric field to control the rotation of the liquid crystal molecules of the pixels, so that the light can pass through the liquid crystal molecules to display images. [0003] A thin film transistor (thin film transistor, TFT) is a key component for driving pixels in a liquid crystal display device. In the known technology, the electronic channel of the TFT is formed at the interface below the semiconductor layer, while the source / drain is at the upper interface of the semiconductor layer. Therefore, the electronic channel of the TFT must pass through the semiconductor layer ...

AI Technical Summary

Problems solved by technology

In the known technology, the electronic channel of the TFT is formed at the interface below the semiconductor layer, while the source/drain is at the upper interface of the semiconductor layer. Therefore, the electronic channel of the TFT must pass through the semiconductor layer to be connected to the source/drain. Thickness, the resistance caused by the thickness of the semiconductor layer will greatly reduce the charging ability of the TFT, so it is necessary to deliberately form an overlap between the gate and the source, and between the gate and the drain to enhance the conduction ability of the electronic channel

However, this overl...

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