Insulated gate bipolar transistor (IGBT) driving circuit

A driving circuit and circuit technology, applied in the direction of electrical components, output power conversion devices, etc., to achieve the effects of suppressing excessive collector voltage, reducing voltage variation, and reducing discharge and shutdown speeds

Active Publication Date: 2013-09-04
EAST GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] But in this kind of circuit, Rg2 can't be too small, otherwise the dv / dt will be very high when the IGBT is turned off, and it must rely on various external absorption circuits to Complete overvoltage suppression, not convenient enough

Method used

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  • Insulated gate bipolar transistor (IGBT) driving circuit
  • Insulated gate bipolar transistor (IGBT) driving circuit
  • Insulated gate bipolar transistor (IGBT) driving circuit

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Embodiment Construction

[0020] In this embodiment, the switch input circuit is a push-pull amplifier circuit composed of two transistors Q1 and Q2 connected, and the bases of the two transistors Q1 and Q2 are connected to each other as the input end of the push-pull amplifier circuit , input the PWM switching pulse, the emitters of the two triodes Q1, Q2 are connected to each other as the output end of the push-pull amplifier circuit, connected to the gate of the IGBT through the on-resistance, and the gate input of the IGBT is conducted On-level or off-level to control the IGBT to be turned on or off. exist figure 2 Among them, the resistance Rge, the capacitance Cge and the two voltage regulator tubes connected in parallel between the gate and the drain of the IGBT play the role of filtering noise signals and preventing false conduction, which is a common setting in the prior art .

[0021] Wherein, the resistance value of the turn-off resistor Rg2 is smaller than the resistance value of the tur...

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PUM

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Abstract

The invention provides an insulated gate bipolar transistor (IGBT) driving circuit, which comprises a switching-on resistor with a relatively higher resistance value, a switching-off resistor with a relatively lower resistance value and a switching input circuit, wherein the switching input circuit is connected to the gate of an IGBT by the switching-on resistor; and one end of the switching-off resistor is connected to the gate of the IGBT. The IGBT driving circuit further comprises an over-voltage detection circuit and a rapid switching-off control circuit. The rapid switching-off control circuit controls the other end of the switching-off resistor to be switched off when the switching input circuits inputs a switching-on level, controls the other end of the switching-off circuit to be grounded when the switching input circuit inputs a switching-off level, and controls the other end of the switching-off resistor to be switched off when the voltage, detected by the over-voltage detection circuit, of the collector of the IGBT is higher than a preset value. The IGBT driving circuit provided by the invention can rapidly realize the rapid switching-off of the IGBT and simultaneously suppress the excessive voltage variations of the IGBT.

Description

technical field [0001] The invention relates to the technical field of power supply control, in particular to an IGBT drive circuit. Background technique [0002] As we all know, IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) will have conduction loss and switching loss during operation. These power losses usually appear as heat, and a heat sink must be used to transfer the heat from power devices to External environment, if the heat sink is not properly designed, these power devices may be damaged due to overheating, so in many applications, the maximum output power of the IGBT is often limited by the thermal design. [0003] Usually, the total average loss of IGBT P T =Psat+Psw, where Psat is the on-state loss of the IGBT, and Psw is the switching loss of the IGBT. [0004] Therefore, the way to reduce the IGBT loss is to reduce the IGBT on-state loss or switching loss, and the on-state loss is generally determined by the saturation voltage ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M1/08
Inventor 戴宝锋
Owner EAST GRP CO LTD
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