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Memory controller, memory read control method, and related memory system

一种存储器控制器、控制信号的技术,应用在存储器控制器,存储器的读取控制领域,能够解决有效数据延迟等问题,达到大容忍度的效果

Active Publication Date: 2021-02-02
SIGMASTAR TECH LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] An object of the present invention is to provide a memory controller, a memory read control method and a related storage system, so as to solve the above-mentioned problem that valid data is delayed

Method used

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  • Memory controller, memory read control method, and related memory system
  • Memory controller, memory read control method, and related memory system
  • Memory controller, memory read control method, and related memory system

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Embodiment Construction

[0042] Certain terms are used in the description and claims to refer to particular elements. Those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same element. The specification and claims do not use the difference in name as a way to distinguish components, but use the difference in function of components as a criterion for distinguishing. "Includes" mentioned throughout the specification and claims is an open term, so it should be interpreted as "including but not limited to". In addition, the word "electrically coupled" here includes any direct and indirect electrical connection means. Therefore, if it is described that a first device is electrically coupled to a second device, it means that the first device may be directly electrically connected to the second device, or indirectly electrically connected to the second device through other devices or connection means. .

[0043] figure 1 It is a schematic diagram ...

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Abstract

The invention provides a memory controller, a memory read control method and a related memory system. The memory controller includes a data latch circuit, a mask generation circuit, a clock control logic electrically coupled to the mask generation circuit, and a demultiplexer electrically coupled to the data latch circuit and the clock control logic. The data latch circuit latches a series of datain a data signal from the memory according to a data strobe signal from the memory. The mask generation circuit generates a mask signal according to the data strobe signal. The clock control logic generates a received clock signal according to the mask signal. The demultiplexer determines valid data in the series of data by means of the received clock signal. According to the invention, the problem that extra data delay is generated in related technologies can be solved; and compared with the prior art, the timing sequence of the mask signal generated by the memory controller provided by theinvention has higher tolerance.

Description

technical field [0001] The invention relates to memory read control, in particular to a memory controller, a memory read control method and a related storage system. Background technique [0002] When a memory controller accesses a double data rate (double data rate, DDR) memory (such as a double data rate synchronous dynamic random access memory (DDR synchronous dynamic random access memory, DDR SDRAM)), in order to determine the memory The timing of accessing data, the accessing data will be transmitted between the memory controller and the double data rate memory together with a data strobe signal. Taking the read action as an example, when the memory controller reads valid data in a data signal from the double data rate memory, the data strobe signal received by the memory controller not only includes the valid data that can be used to latch the valid data. A periodic clock signal of the signal may additionally contain some jitter signals at points in time before and af...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C7/22G11C7/10
CPCG11C7/22G11C7/1006G11C7/1087G11C7/106G06F13/1668G11C7/1066G11C7/222G11C8/18
Inventor 刘先凤
Owner SIGMASTAR TECH LTD
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