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A piezoelectric mems transducer and electronic equipment

A technology for electronic equipment and transducers, applied in the direction of electrostatic transducer microphones, sensors, microphones, etc., can solve the problems of film warpage, low low frequency sensitivity, increased device sensitivity, etc., to improve stiffness, increase sensitivity, and large strain. Effect

Active Publication Date: 2021-11-12
RUISHENG NEW ENERGY DEV CHANGZHOU +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a piezoelectric MEMS transducer, which is used to solve the problems of low frequency sensitivity and film warping of the piezoelectric MEMS transducer in the prior art, and by rationally optimizing the length of the beam and the position of the connecting end, increase the sensitivity of the device

Method used

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  • A piezoelectric mems transducer and electronic equipment
  • A piezoelectric mems transducer and electronic equipment
  • A piezoelectric mems transducer and electronic equipment

Examples

Experimental program
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Embodiment 1

[0038] Reference attached figure 1 As shown, this embodiment discloses a piezoelectric MEMS transducer 100 , including: a substrate 110 , a plurality of beams 120 , a rigid membrane 140 , and a plurality of piezoelectric units 150 .

[0039] Wherein, the substrate 110 has a through cavity 160; each beam 120 has a first end and a second end, the first end of each beam 120 is coupled and fixed to the upper end of the substrate 110, and the second end of each beam 120 is connected to the through cavity. The region 160 extends; the rigid membrane 140 is accommodated in the through cavity 160 and arranged at the lower part of the beam 120, and the second end of each beam 120 is connected to a position other than the center of the rigid membrane 140 through an independently provided connecting part 130; A plurality of piezoelectric units 150 are disposed on the beam.

[0040] In this embodiment, the substrate 110 is a center-symmetric structure, and its internal through-cavity 160 ...

Embodiment 2

[0050] Such as image 3 Shown is another piezoelectric MEMS transducer 200 provided in this embodiment. The difference from Embodiment 1 is that in this embodiment, the eccentric distance of the beam 220 is smaller, and the connecting part 230 is formed on a rigid membrane 240 The ring diameter length L1 is also adjusted accordingly.

[0051] Further, in this embodiment, when the eccentric distance is smaller, the projected length of each beam 220 on the rigid membrane 240 is smaller than the radius of the rigid membrane 240 . Of course, the projected length of each beam 220 on the rigid membrane 240 may also be equal to the radius of the rigid membrane 240 to maintain the strain capacity of the beam 220 .

[0052] Such as Figure 7 Shown is a simulation result diagram of a piezoelectric MEMS transducer provided according to this embodiment. It can be seen from the diagram that the maximum warpage of the rigid film 240 is 1.604 microns.

Embodiment 3

[0054] Such as Figure 4 Shown is yet another piezoelectric MEMS transducer 300. The difference from Embodiment 1 or Embodiment 2 is that in this embodiment, the number of beams is only four. Therefore, the piezoelectric MEMS transducer 300 The number of beams can be configured according to needs, and is not limited to the numbers shown in the first and second embodiments.

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Abstract

The present invention provides a piezoelectric MEMS transducer, comprising: a substrate, the substrate has a through cavity; a plurality of beams, each of which has a first end and a second end, each of the beams The first end is coupled and fixed on the substrate, and the second end of each beam extends toward the region of the through-cavity; a rigid film, the rigid film is accommodated in the through-cavity, and each of the beams The second end of the rigid membrane is connected to a position other than the center of the rigid membrane through an independently provided connecting part; and a plurality of piezoelectric units are arranged on the beam. The invention can improve the rigidity of the rigid film, reduce the warping strength of the rigid film, and ensure the sensitivity of the transducer.

Description

【Technical field】 [0001] The invention relates to the field of semiconductor devices, in particular to a piezoelectric MEMS transducer and electronic equipment. 【Background technique】 [0002] The piezoelectric unit of a piezoelectric MEMS transducer (such as a piezoelectric microphone) is a multilayer film cantilever beam structure formed by thin film deposition and etching. Since one end of the structure is a fixed end, it is very difficult to It is easy to cause its edge area (that is, the free end) to warp under the action of residual stress, which will cause the ventilation opening to become larger, which in turn will cause the air pressure on the rigid membrane to decrease, resulting in a decrease in low-frequency sensitivity. 【Content of invention】 [0003] The purpose of the present invention is to provide a piezoelectric MEMS transducer, which is used to solve the problems of low frequency sensitivity and film warping of the piezoelectric MEMS transducer in the pr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04R19/04H04R7/02H04R7/16H04R1/20
CPCH04R19/04H04R7/02H04R7/16H04R1/20H04R2201/003
Inventor 沈宇童贝石正雨段炼
Owner RUISHENG NEW ENERGY DEV CHANGZHOU
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