Control method and control device of memory and storage medium

Abstract

The invention discloses a control method and control device of a memory and a storage medium. Each memory string in a memory block comprises a channel layer with an N-type doped region at the top. In one memory block, a bit line erase voltage is applied to a selected bit line, an erase prohibition voltage is applied to an unselected bit line, and a top select gate voltage lower than the bit line erase voltage is applied to a top select gate; and when a word line erase voltage lower than the bit line erase voltage is applied to a corresponding word line connected to a memory string corresponding to the selected bit line and the unselected bit line, erase operation can be performed on the memory string corresponding to the selected bit line. According to the mode that the memory string is selected through the bit lines so as to be erased, data migration and potential data loss in the erasing process with the memory blocks as units are eliminated, the erasing time is effectively shortened, the erasing speed is greatly increased, meanwhile, the programming erasing frequency of the memory unit can be reduced, and the degradation degree of the memory unit is reduced.

Description

technical field [0001] The present invention generally relates to electronic devices, and more specifically, relates to a memory control method, a control device and a storage medium. Background technique [0002] With the development of 5g and big data, people's demand for storage capacity and storage speed is getting higher and higher. 3D NAND flash memory is currently the mainstream non-volatile memory. At present, the main erasing method of 3D NAND flash memory array is to store Erasing is performed in units of blocks. As the density of storage cells increases, the erasing speed will gradually slow down, which affects the use speed of NAND. [0003] When you choose to erase block1, you need to select an empty block in advance for data migration, and then erase block1. When there are more and more storage units in the block, this block erasing method that requires data migration will seriously affect the erasing speed, and the erasing time will be long. Moreover, the er...

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