74results about How to "Reduce erasure time" patented technology

Flash memory cells are provided that include a first source / drain region and a second source / drain region separated by a channel region. A first gate opposes. A first gate insulator separates the first gate from the channel. The first gate insulator includes a graded composition gate insulator. A second gate is separated from the first gate insulator by a second gate insulator. The above memory cells produce gate insulators with less charging at the interface between composite insulator layers and provide gate insulators with low surface state densities. The memory cells substantially reduce large barrier heights or energy problems by using dielectrics having suitably, adjustably lower barrier heights in contact with the polysilicon floating gate. Such adjustable barrier heights of controlled thicknesses can be formed using a silicon suboxide and a silicon oxycarbide dielectrics prepared according to the process as described herein.

A MONOS nonvolatile memory of a split gate structure, wherein writing and erasing are performed by hot electrons and hot holes respectively, is prone to cause electrons not to be erased and to remain in an Si nitride film on a select gate electrode sidewall and that results in the deterioration of rewriting durability. When long time erasing is applied as a measure to solve the problem, drawbacks appear, such as the increase of a circuit area caused by the increase of the erasing current and the deterioration of retention characteristics. In the present invention, an Si nitride film is formed by the reactive plasma sputter deposition method that enables oriented deposition and the Si nitride film on a select gate electrode sidewall is removed at the time when a top Si oxide film is formed.

The invention relates to an erasing method for a flash memory. The method comprises the following three operation steps: pre-programmed checking, i.e. pre-programming; erase checking, i.e. erasing; and over-erase checking, i.e. over-erase correction. In the method, two state zone bits comprising an erase zone bit and an over-erase zone bit are adopted; an erase and over-erase loop is adopted; and when the cycle index of the loop exceeds preset times, the erasing operation is stepped out. According to the invention, the erasing time is shortened.

The invention discloses an erasing method for a non-volatile memory. The method comprises the following steps of: selecting a target, namely, selecting 2n to-be-erased adjacent memory blocks in the non-volatile memory, wherein n is a natural number; performing pre-programming operation, namely, pre-programming the 2n adjacent memory blocks in groups; erasing, namely, simultaneously erasing the 2n adjacent memory blocks; checking the erasing, namely, checking whether the 2n adjacent memory blocks are successfully erased in groups, if so, performing soft programming operation, and otherwise, returning to the erasing step; and performing the soft programming operation, namely, performing the soft programming operation on the adjacent memory blocks in groups. The method can save erasing time and improve erasing speed and erasing efficiency.

A flash memory device using an error correction code (ECC) algorithm and a method of operating the same. The device includes a memory cell array including a error correction code (ECC) block including data memory cells configured to store data and a parity cell configured to store a first parity code, a parity controller configured to generate a second parity code based on a the current operating mode of the flash memory device, and an error correction unit configured to receive one of the first and second parity codes and to perform an ECC algorithm on the data stored in the data memory cells using the received parity code. A control logic restarts an erase operation on an erroneously unerased data memory cell or prevents the erase operation from being restarted based on the number of erroneous bits per ECC block.

A method for erasing a non-volatile memory is provided. The non-volatile memory includes a first conductive type substrate, a second conductive type well disposed in the first conductive type substrate, a first conductive type well disposed on the second conductive type well, and a memory cell disposed on the first conductive type substrate. The memory cell includes a charge trapping layer and a gate. The erasing method includes the following steps. A first voltage is applied to the gate, a second voltage is applied to the first conductive type substrate, and the second conductive type well is floating. The second voltage is large enough to induce a substrate hot hole effect. The holes are injected into the charge trapping layer by applying the first voltage.

The invention discloses a data operation method of a 3D storage device. The 3D memory device has a plurality of memory cell strings arranged in a direction perpendicular to a substrate, each memory cell string including a first select transistor, a first dummy memory cell, a plurality of main memory cells, a second dummy memory cell, and a second select transistor, including: receiving an erase instruction; executing an erase operation on the first pseudo storage unit, the plurality of main storage units and the second pseudo storage unit according to the erase instruction; verifying whether the plurality of main storage units are erased successfully or not after the erase operation is finished; when the plurality of main storage units are erased successfully, receiving a programming instruction; and executing programming operation on the first pseudo storage unit and the second pseudo storage unit according to the programming instruction. The pseudo storage unit and the storage unit are erased at the same time, and then the pseudo storage unit is programmed, so that the erasure efficiency of the edge storage unit is improved, the erasure frequency is reduced, and the reliability of the storage unit is improved.

The invention discloses a method for accelerating the erasing operation of a flash memory, and a system thereof. The method comprises the following steps: erasing the memory block or memory area of the flash memory; and storing the substrate voltage of the memory cell of the memory block or the memory area when the erasing operation ends in a permanent memory arranged corresponding to the memory block or the memory area as a first substrate voltage, wherein the first substrate voltage is an initial substrate voltage of a next erasing operation of the memory block or the memory area. The method and the system can improve the erasing ability of the memory block or the memory area of the flash memory and shorten the erasing time.

A data writing method and a memory controller and a memory storage apparatus using the same are provided. The data writing method includes grouping a plurality of physical blocks into a plurality of physical units, grouping the physical units into at least a data area and a free area, and configuring a plurality of logical units for mapping to the physical units of the data area. The data writing method also includes getting a physical unit from the free area, writing data in at least one of the logical units into the gotten physical unit, and writing an end mark into the gotten physical unit, and in the gotten physical unit, the end mark follows the data belonging to the at least one logical unit. Thereby, the storage space of each physical unit can be effectively used, and the lifespan of the memory storage apparatus can be prolonged.

An electrically erasable charge trap nonvolatile memory cell has an initial threshold voltage, a program voltage that is higher than the initial threshold voltage, and an erase threshold voltage that is lower than the program threshold voltage but is higher than the initial threshold voltage. The programmed electrically erasable charge trap nonvolatile memory cells may be erased by applying an erase voltage for a time interval that is sufficient to lower the threshold voltage the transistor from a program threshold voltage to an erase threshold voltage that is lower than the program threshold voltage, but is higher than the initial threshold voltage. The time interval may be determined by repeatedly performing an endurance test using a time interval that is increased or decreased from an initial time interval, to obtain the time interval that meets an endurance specification, or allows a read to be performed successfully.

An electrically erasable charge trap nonvolatile memory cell has an initial threshold voltage, a program voltage that is higher than the initial threshold voltage, and an erase threshold voltage that is lower than the program threshold voltage but is higher than the initial threshold voltage. The programmed electrically erasable charge trap nonvolatile memory cells may be erased by applying an erase voltage for a time interval that is sufficient to lower the threshold voltage the transistor from a program threshold voltage to an erase threshold voltage that is lower than the program threshold voltage, but is higher than the initial threshold voltage. The time interval may be determined by repeatedly performing an endurance test using a time interval that is increased or decreased from an initial time interval, to obtain the time interval that meets an endurance specification, or allows a read to be performed successfully.

The invention provides an erasure method and device for a nonvolatile memory, aiming at solving the problems that current erasure operation causes unnecessary time expenditure and has complicated process. The method comprises the steps of after receiving an erasure command, performing pre-reading check on a target erasure area corresponding to the erasure command; and if the pre-reading check is passed, erasing the target erasure area, but if not, performing pre-programming check on the target erasure area, and erasing the target erasure area after the pre-programming check is passed. Unnecessary pre-programming check processes are not needed before the erasure operation under the situation that the target erasure area is in all-erasure state, so that the erasure time can be saved, and the erasure process is simple.

The invention discloses a software and hardware combined nonvolatile memory erasure control method capable of prolonging the service life. The method comprises the steps that first, a software is configured with and uses the multi-pulse erasure and enables the enhanced reading; then, the system initiates a request for erasing a nonvolatile memory, the hardware suspends the CPU clock, and the execution of other instructions is prevented; and after the erasing process is completed, the hardware reads the data of the erasing block by using a more strict standard, judges whether the erasing is successful, and informs the software of an erasing result flag bit; if the erase is successful, the CPU clock is turned on, and the subsequent instruction operation is executed continuously; if the erasefails, the software initiates a second erase instruction operation until the correct data is read; if the continuous N times of multi-pulse erase fails, the (N + 1)-th software enables the normal reading, and the data of the erase block is read; if the continuous N times of multi-pulse erase is successful, it is considered that the erase succeeds, otherwise, the erase process fails, wherein N canbe preset. According to the present invention, the service life of the nonvolatile memory can be effectively prolonged.

A flash memory device using an error correction code (ECC) algorithm and a method of operating the same. The device includes a memory cell array including a error correction code (ECC) block including data memory cells configured to store data and a parity cell configured to store a first parity code, a parity controller configured to generate a second parity code based on a the current operating mode of the flash memory device, and an error correction unit configured to receive one of the first and second parity codes and to perform an ECC algorithm on the data stored in the data memory cells using the received parity code. A control logic restarts an erase operation on an erroneously unerased data memory cell or prevents the erase operation from being restarted based on the number of erroneous bits per ECC block.

Structures and methods involve dynamic enhancement mode p-channel flash memories with ultrathin tunnel oxide thicknesses. Both write and erase operations are performed by tunneling. The p-channel flash memory cell with thin tunnel oxides will operate on a dynamic basis. The stored data can be refreshed every few seconds as necessary. However, the write and erase operations will now be orders of magnitude faster than traditional p-channel flash memory. Structures and methods for p-channel floating gate transistors are provided that avoid p-channel threshold voltage shifts and achieve source side tunneling erase. The p-channel memory cell structure includes a floating gate separated from a channel region by an oxide layer of less than 50 Angstroms. The methods further include reading the p-channel memory cell by applying a potential to a control gate of the p-channel memory cell of less than 1.0 Volt.

The present invention discloses a memory chip erasing method, wherein a current limiting device connection manner of a common-source of a memory chip is changed into a ground connection manner. The method comprises: carrying out pre-programming on a block in a storage unit; erasing all storage units; verifying the erased storage unit; and adopting a bit line as a unit to carry out soft programming verification. With the method, an erasing time can be effectively shortened; due to use of the current limiting device, a plurality of the units are concurrently erased, and the current of the storage unit can not be too large, such that the storage unit can not be destroyed, and reliability of the erasing operation is ensured, such that the method is particularly applicable for large capacity memory chips.

The invention discloses a flash memory configuration method. A flash memory comprises a data storage array and a configuration information storage array, wherein the data storage array comprises at least one sector. The flash memory configuration method comprises the following steps: a) carrying out an erasing operation to the sector; b) verifying whether the sector is successfully erased or not; c) if the sector is successfully erased, writing a binary code corresponding to sector erasing time into the configuration information storage array; d) if the sector fails to be erased, judging whether sector erasing operation frequencies reach an upper limit or not; e) if the sector erasing operation frequencies reach the upper limit, judging that the sector fails; and f) if the sector erasing operation frequencies do not reach the upper limit, repeating the step a). The flash memory can be protected from over-erasing, sector erasing time is shortened, time for a flash memory unit to bear high-pressure stress is shortened, and the reliability of the flash memory unit is improved.

A data storage system including a processor configured to execute a plurality of tasks, wherein the processor is configured to generate writing status information based on the data relevant information and otre the data relevant information and the writing status information in association with each other in the nonvolatile memory when the processor write data in the recording medium based on demand of the task and writing to the recording medium is configured to be controlled based on the data relevant information and the write-in status information stored in nonvolatile memory.

A non-volatile memory is provided, including a control gate, a floating gate, a gate oxide layer, a source region, a drain region, a first dielectric layer, a second dielectric layer, and an erase gate. The control gate is disposed in a substrate. The floating gate comprising a coupling part and a gate part is disposed over the control gate and located over a portion of the substrate with the gate oxide layer there-between. The source region adjoins with one side of the gate part, while the drain region adjoins with the other side of the gate part. The first dielectric layer is disposed on the floating gate. The second dielectric layer is disposed on the sidewalls of the floating gate. The erase gate is disposed over the coupling part of the floating gate and covers the first dielectric layer and the second dielectric layer.

A storage device includes memory cells disposed in a matrix. The memory cells each include a storage element whose resistance changes from a higher state to a lower state when an electric signal of a first threshold level or higher is applied and whose resistance changes from the lower state to the higher state when an electric signal of a second threshold level or higher whose polarity is different from the polarity of the electric signal of the first threshold level or higher is applied, and a circuit element connected in series with the storage element. In a state in which an erasing voltage is applied to at least one memory cell on which erasing is currently being performed, after the lapse of a predetermined time from the application, an erasing voltage is applied to at least one memory cell on which erasing is to be next performed.

A method for writing data into a flash memory, wherein the flash memory includes a plurality multi-level cells, and each of the plurality of multi-level cells is capable of storing a plurality of bits. The method includes: storing a first bit into each of the plurality of multi-level cells respectively; determining if each of the plurality of multi-level cells stores the first bit respectively; and when each of the plurality of multi-level cells stores the first bit respectively, storing a second bit into each of the plurality of multi-level cells respectively.

A storage device includes memory cells disposed in a matrix. The memory cells each include a storage element whose resistance changes from a higher state to a lower state when an electric signal of a first threshold level or higher is applied and whose resistance changes from the lower state to the higher state when an electric signal of a second threshold level or higher whose polarity is different from the polarity of the electric signal of the first threshold level or higher is applied, and a circuit element connected in series with the storage element. In a state in which an erasing voltage is applied to at least one memory cell on which erasing is currently being performed, after the lapse of a predetermined time from the application, an erasing voltage is applied to at least one memory cell on which erasing is to be next performed.

The invention discloses a method and a system for reducing erasing interference and erasing time, a storage medium and a terminal. The method comprises the step of performing first refreshing processing on other programming units which belong to the same array as an erased unit in a chip by adopting a sampling inspection mode or performing first refreshing processing on other programming units which belong to the same array as the erased unit in the chip by adopting a circulating mode. Although certain reliability of the chip is sacrificed, the erasing time is greatly reduced, and the use requirements of products are met.

The invention relates to the technical field of memories and particularly relates to a flash chip and an erasing method thereof. The flash chip comprises a memory array, m word line driving sub-circuits and a bit line selecting circuit, wherein the memory array comprises m memory subarrays and a redundancy unit zone; the m memory subarrays are formed in one well region; the redundancy unit zone is formed between two adjacent memory subarrays; during erasing, a drain electrode of a memory unit in the redundancy unit zone is suspended in midair; the m word line driving sub-circuits are respectively connected to the m memory subarrays; each word line driving sub-circuit provides driving signal to the memory subarray connected to the corresponding word line driving sub-circuit; and the bit line selecting circuit provides a plurality of bit lines, is connected to drain electrodes of memory units of the memory subarrays in each row of the memory array and is used for selecting the memory units in the memory subarrays. Erasing performance of the flash chip provided by embodiments is improved and erasing time of the flash chip is shortened, thus increasing the erasing efficiency.