Patents
Literature
Patsnap Eureka AI that helps you search prior art, draft patents, and assess FTO risks, powered by patent and scientific literature data.

4results about How to "Improve erase effect" patented technology

Flash memory device and method of manufacturing the same

ActiveCN116344335BOptimize process flowsmall sizeCondensed matter physicsMaterials science
The application provides a flash memory device and a manufacturing method thereof. After removing a hard mask layer, a floating gate material layer is etched to form a floating gate under a first sidewall and form a floating gate tip at the top of the sidewall of the floating gate away from a source line. The application optimizes the process flow of the flash memory device, cancels the etching step of the floating gate material layer before the forming step of the first sidewall, and forms the floating gate tip at the top of the sidewall of the floating gate away from the source line, which reduces the influence of the thickness variation of the floating gate on the sharpness of the floating gate tip and facilitates the further size reduction of the flash memory device. Further, the application exposes the floating gate tip by shortening the thickness of the first sidewall, which optimizes the erasing effect of the flash memory device.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP

Flash device and method of forming the same

PendingCN122269738AImprove erase effectSimple manufacturing processDielectric layerPhysics
The application relates to a FLASH device and a forming method thereof. The forming method of the FLASH device comprises the following steps: forming a substrate, the substrate comprising a substrate, a plurality of unit structures located above the substrate and an isolation groove located between adjacent unit structures, the unit structure comprising a floating gate and a dielectric layer covering the floating gate; forming a filling layer filling the isolation groove and covering the dielectric layer; forming an auxiliary layer covering the filling layer, the etching selection ratio of the auxiliary layer and the filling layer reaching 1:1; etching back the auxiliary layer and the filling layer at the same etching rate, removing the auxiliary layer and part of the filling layer, and the surface of the remaining filling layer away from the substrate being flush with the surface of the dielectric layer away from the substrate. The application reduces or even avoids the generation of a filling layer sharp corner at the edge of the isolation groove, and eliminates the influence of the filling layer sharp corner on the subsequent deposition of an erasing layer.
Owner:GTA SEMICON CO LTD

Liquid crystal handwriting pad

The application discloses a liquid crystal handwriting board and belongs to the technical field of display. The liquid crystal handwriting board comprises a first substrate, a second substrate and a liquid crystal layer. A transistor in the first substrate is electrically connected with a pixel electrode, and the transistor is sensitive to light. Here, the area of the channel region of the transistor is large. Therefore, the transistor is more likely to be turned on after being irradiated by target light, that is, the sensitivity of the liquid crystal handwriting board is high, and thus the erasing effect of the liquid crystal handwriting board is good.
Owner:BOE TECHNOLOGY GROUP CO LTD +2