Split gate flash memory and forming method thereof

Abstract

The invention provides a split gate flash memory and a forming method thereof. The forming method of the split gate flash memory includes that: a first media layer and a floating gate layer are sequentially formed on a substrate; a discrete second media layer is formed on the floating gate layer, and an area where the second media layer is located is a word line area; first side walls are formed around the second media layer, and areas between adjacent first side walls are source electrode line areas; the floating gate layer and the first media layer are etched to the substrate by using the first side walls as masks; source electrode lines are formed on the source electrode line areas; a floating gate and a floating gate media layer are formed by removing the second media layer, and the floating gate layer and the first media layer under the second media layer; a third media layer is formed on a floating gate side wall below the top tip of the floating gate which is adjacent to the word line area; a tunneling media layer is formed to cover the substrate, the third media layer, the floating gate, the first side walls and the surfaces of the source electrode lines; and word lines are formed on the tunneling media layer of the word line area. By using the forming method, erasure performance is improved, voltage applied on the word lines is reduced, and power consumption is saved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a split-gate flash memory and a forming method thereof. Background technique [0002] In the current semiconductor industry, integrated circuit products can be mainly divided into three types: logic, memory and analog circuits, among which storage devices account for a considerable proportion of integrated circuit products, such as RAM (random access memory), DRAM (dynamic Random access memory), ROM (read-only memory), EPROM (erasable programmable read-only memory), FLASH (flash memory) and FRAM (ferroelectric memory), etc. The development of flash memory in memory is particularly rapid. Its main feature is that it can keep the stored information for a long time without power on. It has many advantages such as high integration, fast access speed and easy erasure, so it has been widely used in many fields such as microcomputer and automatic control. a wide range of applications. ...

AI Technical Summary

Problems solved by technology

[0013] The technical problem to be solved by the present invention is that the erasing performance of the self-aligned split-gate flash memory formed in the prior art is poor, and the voltage during the erasing operation, that is, the voltage applied to the word line is relatively high, so that the device is High power consumption during erase operation

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