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30results about How to "Good off" patented technology

Flash memory unit for shared source line and forming method thereof

The embodiment of the invention provides a flash memory unit for a shared source line and a forming method thereof. The provided flash memory unit for the shared source line comprises a semiconductor substrate, a source line, a floating gate dielectric layer, a floating gate, a control gate dielectric layer, a control gate, side wall dielectric layers, side walls, a tunneling oxide layer, a word line, a drain electrode and a source electrode, wherein the source line is positioned on the surface of the semiconductor substrate; the floating gate dielectric layer, the floating gate, the control gate dielectric layer and the control gate are sequentially positioned on the surface of the semiconductor substrate on two sides of the source line; the side wall dielectric layers are positioned between the source line and the floating gate as well we between the source line and the control gate; the side walls are positioned on the floating gate and the control gate, which are far from the source line; the tunneling oxide layer is adjacent to the side wall and is positioned on the surface of the semiconductor substrate; the word line is positioned on the surface of the tunneling oxide layer; the drain electrode is positioned in the semiconductor substrate at one side of the word line, which is far from the source line; the source electrode is positioned in the semiconductor substrate which is right opposite to the source line; and the floating gate is provided with a p-type doping end which is close to the source line, wherein the doping type of the floating gate is in a p type and the doping type of other parts is respectively in an n type.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP

Production equipment of non-woven fabric compound economic master batch

The invention relates to a production equipment of a non-woven fabric compound economic master batch. The formulation of the master batch comprises: 12-18 parts of polypropylene resin with melt index being 60-90, 6-10 parts of polypropylene resin with melt index being 3-30, 55-65 parts of nanometer active calcium carbonate, 8-10 parts of polyethylene wax, 0.5-0.7 part of compound antioxidant, 1.5-2.5 parts of zinc stearate, 1.5-2.5 parts of titanic acid ester, 1.5-2 parts of white oil and 1.5-2 parts of rutile titanium dioxide. The production method of the master batch comprises the steps of: feeding the materials after intensive mixing into a double-screw extruder and later into a single-screw extruder, conducting melt extrusion, grain cutting and screening to produce non-woven fabric finished product. The production equipment adopts a stair-type screw extruder comprising the first-stair double-screw extruder and the second-stair single screw extruder which are arranged in a 'T'-type. The invention adopts the nanometer active calcium carbonate which can partially substitute PP materials used for non-woven fabric. After being added to the PP materials used for the non-woven fabric, the invention can greatly reduce the cost of the materials and save large amount of energy under the premise that melt blowing and calendaring guarantee the no-breaking of fibers.
Owner:胡国川

Multichannel isolation type power device switch drive module of power conversion controller

The invention provides a multichannel isolation type power device switch drive module of a power conversion controller. The signal input end of the low frequency full bridge rectification filter circuit is connected with an alternating current power supply of a grid connected power generating network. The signal output end is connected with the signal input end of a high voltage and high frequency pulse power signal generating circuit. The signal output end of the high voltage and high frequency pulse power signal generating circuit is connected with the signal input end of an isolation type direct current level power supply circuit. The signal output end of the isolation type direct current level power supply circuit is connected with the signal input end of a pulse level shifting circuit. Signal pulse emitted by a power conversion controller is connected with the signal input end of a pulse level shifting circuit. According to the invention, the module has the advantages of simple structure and stable and reliable performance, can well drive the power conversion controller, and is suitable for various composite applications in half bridge, full bridge, three-phase bridge and multilevel topology circuits and a power management circuit in frequency conversion and speed regulation.
Owner:四川绿然电子科技有限公司

Junction-free field effect transistor and formation method thereof

The invention provides a junction-free field effect transistor and a formation method thereof. The formation method comprises the steps of providing a substrate with a first region and a second region; forming a first doped region and a second doped region; removing part of the substrate so as to form a first opening and a second opening; and filling with openings with a metal containing material layer so as to form a source region and a drain region in the first opening and the second opening respectively. The invention further provides a junction-free field effect transistor, which comprises a substrate, a first doped region, a second doped region, a first gate structure, a second gate structure, a first opening and a second opening, and is characterized in that the first opening and the second opening are internally provided with metal containing material layers which act as a source region and a drain region respectively. The beneficial effects of the invention lie in that contact resistance between the source / drain region and a conductive plug is small, turn-on current is increased, and the performance of the junction-free field effect transistor is improved; and the difficulty of a doping process is simplified, and the degree of an interface scattering problem possibly occurred in the doped regions is reduced to a certain extent.
Owner:SEMICON MFG INT (SHANGHAI) CORP

Super-distortion control-based DC-DC converter chaotic control method and system, and medium

The invention relates to a super-distortion control-based DC-DC converter chaotic control method and system, and medium. The method comprises steps of performing mathematical modeling on a DC-DC converter, so as to obtain a chaotic model of a state variable of the DC-DC converter; acquiring a chaotic energy storage value in a chaotic state in the chaotic model, acquiring an energy storage constantvalue in a stable state in the chaotic model according to the chaotic energy storage value, and determining an error variable according to the chaotic energy storage value and the energy storage constant value; based on a super-distortion control method, acquiring an estimated error amount according to the error variable, designing an equivalent sliding mode controller according to the error variable and the estimated error amount, so as to obtain a control signal of the equivalent sliding mode controller; and controlling the DC-DC converter according to the control signal. The method can effectively control the DC-DC converter in the chaotic state to run in a 1- periodic state orbit, so that chaotic phenomenon is eliminated effectively, the DC-DC converter responds dynamically faster, has stronger robustness, and has lower voltage ripples.
Owner:WUHAN INSTITUTE OF TECHNOLOGY

Scintillator afterglow accurate measurement device and method

PendingCN112034505AOutput pulse frequency adjustableOutput pulse width adjustableRadiation measurementTime informationPhotocathode
The invention provides a scintillator afterglow accurate measurement device and method, and solves the problem of low afterglow time measurement accuracy of an existing afterglow test device. The device comprises an X-ray shielding shell, an X-ray generating mechanism, a test shielding shell, a detector and a time processing unit, the X-ray generating mechanism comprises a light source, a vacuum shell, an input window, a photoelectric cathode, a focusing electrode, an anode target and a light source control circuit. The light source control circuit controls on-off of the light source and sendsan initial signal to the time processing unit. An isolation sealing sleeve is arranged outside the light source; an X-ray output window is arranged between the side wall of the vacuum shell and the X-ray shielding shell; a cavity formed by the X-ray shielding shell, the isolation sealing sleeve, the vacuum shell and the X-ray output window is filled with an insulation heat dissipation medium; thedetector is arranged in the test shielding shell and used for sending a termination signal to the time processing unit and obtaining intensity information of afterglow of the scintillator to be tested, and the time processing unit is used for obtaining afterglow time information of the scintillator to be tested.
Owner:XI'AN INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI

Tunnel field effect transistor with increased on state current

InactiveCN106206703ASuppresses part of the off-state leakage pathSuppresses off-state leakage pathsSemiconductor/solid-state device manufacturingDiodeVery large scale integrated circuitsCMOS
The invention belongs to the field of a logic device and circuit in the field of a super-large-scale integrated circuit, specifically a tunnel field effect transistor with an increased on state current. According to the tunnel field effect transistor, a low K dielectric area is arranged between a source area and a drain area, thereby isolating the source area and the drain area; an intrinsic area is arranged on the source area; a layer of conductive channel is arranged between the intrinsic area and the drain area; and the conductive channel is located on the low K dielectric area. According to the structure of the tunnel field effect transistor, the bipolar effect of a traditional transverse TFET is weakened. Through utilization of a low K dielectric, the contact between the drain area and the intrinsic area is reduced and the bipolar effect is weakened, thereby facilitating thorough switch-off of a device. An electric field of a tunnel junction area is increased by employing the low K dielectric and a high K side wall. The on state current of the TFET is increased through adoption of the side wall (a passivation layer) made of a high dielectric material. According to the tunnel field effect transistor, the bipolar effect is weakened, the on state current is increased, the tunnel field effect transistor is compatible with a CMOS technology and the cost is low.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Intelligent mobile merchandise concrete stirring station

The invention relates to an intelligent mobile merchandise concrete stirring station, and elates to the technical field of merchandise concrete stirring stations. The intelligent mobile comprises a control unit configured to output a control signal according to a set program and/or temporarily input instruction data; a material storage unit including a plurality of material storage tanks which arerespectively used for storing various production raw materials; a mixing unit including a stirring device in control connection with the control unit; a first discharging unit arranged between the material storage unit and the mixing unit in a communicating mode and in control connection with the control unit; a storage unit including a plurality of transportation tanks which are respectively used for storing different types of mixtures mixed and output by the mixing unit; a second discharging unit arranged between the mixing unit and the storage unit in a communicating manner and in controlconnection with the control unit; and a discharging unit in control connection with the control unit and controlled by the control signal of the control unit to transfer the transportation tanks filled with the set type of mixtures to a loading tool. The intelligent mobile merchandise concrete stirring station provided by the invention has the effect that a mixing plant can conveniently select a more suitable site for operation.
Owner:上海技信工业智能科技有限公司

Non-woven fabrics composite economical master batch and its producing method and device

The present invention relates to a non-woven composite economical master batch and the production method and equipment. The formula of the master batch is: 12 to 18 shares of polypropylene resin with the melt index between 60 and 90, 6 to 10 shares of polypropylene resin with the melt index between 3 and 30, 55 to 65 shares of nanometer-level active calcium carbonate, 8 to 10 shares of polyethylene wax, 0.5 to 0.7 share of composite antioxidant, 1.5 to 2.5 shares of zinc stearate, 1.5 to 2.5 shares of zinc titanate, 1.5 to 2 shares of white oil, and 1.5 to 2 shares of white powder of the rutile titanium dioxide. The production method of the master batch is: the materials are mixed well and sent into the twin-screw extruder; then the materials are sent into the single-screw extruder, aftermelting, extruding, pelletizing, and screening, the non-woven product can be made; the production equipment is a ladder-type screw extruder, including a first-stage twin-screw extruder and a second-stage single-screw extruder; the two extruders are arranged in a T shape. The nanometer-level active calcium carbonate used in the present invention can partially replace the non-woven PP material; addthe present invention into the non-woven PP material; under the premise that the fiber is guaranteed not to be broken when melted and extruded, the material cost can be greatly reduced and a large amount of energy can be saved.
Owner:胡国川

Extending-and-contracting type valve for large-diameter pipe

The invention relates to an extending-and-contracting type valve for a large-diameter pipe and belongs to the technical field of valves. The extending-and-contracting type valve comprises a valve body. The upper surface and the lower surface of the valve body are provided with an upper end cover and a lower end cover correspondingly. First gaskets are arranged between the upper end cover and the valve body as well as between the lower end cover and the valve body correspondingly. The upper end cover, the corresponding first gasket and the valve body are fixedly connected through first screws.The lower end cover, the corresponding first gasket and the valve body are also fixedly connected through first screws. A threaded rod and two guiding rods are arranged between the upper end cover andthe lower end cover. The threaded rod is provided with a valve handle and two nuts. Transmission arms are arranged at the two sides of each nut. A piston is arranged between the corresponding two transmission arms of each side of a threaded rod central shaft in a shared manner. A guide pillar is arranged between each piston and the corresponding adjacent guiding rod in a shared manner. Accordingto the extending-and-contracting type valve, by means of the effect of the threaded rod, the large axial thrust can be generated through the small torque, and thus the extending-and-contracting type valve can achieve the labor-saving effect; and the problem that in the prior art, when a valve is damaged and cannot be repaired, the valve is replaced with a new valve is solved, and thus the living cost is saved.
Owner:BEIHAI YISHENGYUAN AGRI TRADE CO LTD

LED lamp power supply capable of reducing power at regular time

The invention provides an LED lamp power supply capable of reducing power at a regular time. The LED lamp power supply comprises a fuse F1, a rectifier transformer L1, a capacitor CX1, a filter U, a rectifier transformer L3, a sliding resistor VR2, a diode D, a resistor R4, a filter capacitor C3, a triode DW, a PWM regulator U1M and a resistor R6, wherein the right end of the fuse F1 is connected with the rectifier transformer L1; the right end of the rectifier transformer L1 is connected with the capacitor CX1; the filter U is mounted at the right end of the capacitor CX1; the right end of the filter U is connected with the rectifier transformer L3; the right end of the rectifier transformer L3 is connected with the sliding resistor VR2; through such a design, protection for the main body of a circuit is achieved; the right end of the diode D is connected with the resistor R4 and the filter capacitor C3 respectively; the right end of the resistor R4 is connected with the triode DW and the PWM regulator U1M respectively; the right end of the PWM regulator U1M is connected with the resistor R6; through such a design, regulation of the output power of a LED lamp L5 is achieved. The LED lamp power supply is convenient to operate, can protect the circuit, can carry out intelligent control, and is convenient to detach, good in stability and high in reliability.
Owner:中山市恒能电子科技有限公司

Flash memory unit sharing source line and method for forming the same

The embodiment of the invention provides a flash memory unit for a shared source line and a forming method thereof. The provided flash memory unit for the shared source line comprises a semiconductor substrate, a source line, a floating gate dielectric layer, a floating gate, a control gate dielectric layer, a control gate, side wall dielectric layers, side walls, a tunneling oxide layer, a word line, a drain electrode and a source electrode, wherein the source line is positioned on the surface of the semiconductor substrate; the floating gate dielectric layer, the floating gate, the control gate dielectric layer and the control gate are sequentially positioned on the surface of the semiconductor substrate on two sides of the source line; the side wall dielectric layers are positioned between the source line and the floating gate as well we between the source line and the control gate; the side walls are positioned on the floating gate and the control gate, which are far from the source line; the tunneling oxide layer is adjacent to the side wall and is positioned on the surface of the semiconductor substrate; the word line is positioned on the surface of the tunneling oxide layer; the drain electrode is positioned in the semiconductor substrate at one side of the word line, which is far from the source line; the source electrode is positioned in the semiconductor substrate which is right opposite to the source line; and the floating gate is provided with a p-type doping end which is close to the source line, wherein the doping type of the floating gate is in a p type and the doping type of other parts is respectively in an n type.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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