Flash memory unit sharing source line and method for forming the same

Abstract

Embodiments of the present invention provide a flash memory unit that shares a source line and a forming method thereof. The provided flash memory unit that shares a source line includes: a semiconductor substrate; a source line located on the surface of the semiconductor substrate; and located on both sides of the source line in sequence. The floating gate dielectric layer, floating gate, control gate dielectric layer and control gate on the surface of the side semiconductor substrate; the side wall dielectric layer located between the source line and the floating gate and control gate; the floating gate and control gate located away from the source line The sidewalls, and the tunnel oxide layer on the surface of the semiconductor substrate adjacent to the sidewalls; the word line located on the surface of the tunnel oxide layer; the word line located in the semiconductor substrate on the side of the word line away from the source line Drain; a source located in the semiconductor substrate facing the source line; wherein, the floating gate has a p-type doping end close to the source line with a p-type doping type, and the remaining portion has an n-type doping type. type.

Description

technical field [0001] The invention relates to a semiconductor device and its forming method, in particular to a flash memory unit sharing a source line and its forming method. Background technique [0002] In the current semiconductor industry, integrated circuit products can be mainly divided into three types: analog circuits, digital circuits and digital / analog hybrid circuits, among which storage devices are an important type of digital circuits. In recent years, among storage devices, a flash memory (flash memory, referred to as a flash memory unit) has developed particularly rapidly. The main feature of the flash memory unit is that it can keep the stored information for a long time without power on; and it has the advantages of high integration, fast access speed, easy erasing and rewriting, etc. Has been widely used. [0003] figure 1 It is a schematic structural diagram of an existing flash memory unit sharing a source line, including: a semiconductor substrate ...

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Problems solved by technology

[0005] The problem to be solved by the present invention is to provide a flash memory unit sharing a source line and its forming method, so as to solve the problem that the programming efficiency of the flash memory unit sharing a source line in the existing structure is relatively low when the size of the device is reduced

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