191results about How to "Improve memory performance" patented technology

A programmable logic device comprising one or more horizontal routing channels, one or more vertical routing channels, and a logic element. Each logic element may be configured to connect between one of the horizontal routing channels and one of the vertical routing channels. The logic element may comprise a logic block cluster and a memory block.

Methods and apparatus for efficiently tracking the usage of physical blocks of non-volatile memory are disclosed. According to one aspect of the present invention, a method for maintaining a data structure that stores contents relating to the usage of physical blocks includes determining when to update the contents stored in the data structure, and obtaining a first differential erase count from the data structure when the contents are to be updated. The first differential erase count provides information on a number of times a first physical block has been erased. The method also includes determining a first actual erase count when the contents are to be updated. The first actual erase count is associated with a second physical block, and provides a number of times the second physical block has been erased. Finally, the method includes updating the first differential erase count when the contents are to be updated.

Host system data files are written directly to a large erase block flash memory system with a unique identification of each file and offsets of data within the file but without the use of any intermediate logical addresses or a virtual address space for the memory. Directory information of where the files are stored in the memory is maintained within the memory system by its controller, rather than by the host.

A method and system of memory management incorporates multiple banks of memory devices organized into independent channels wherein each bank of memory devices contains duplicate data. A tree memory controller controls data read and write accesses to each of the banks in each of the channels. A bank queue for each bank in each channel keeps track of bank availability. When read or write requests are received at the tree memory controller, the controller checks the availability of each bank in a channel, identifies a first available bank, and executes the read request from the first available bank. In response to a write request, the controller blocks all read requests once it has confirmed that data to be written is complete for the selected memory word length. As soon as each bank queue for read requests is empty, the controller initiates burst mode transfer of the completed data word to all banks concurrently.

A host receives information related to garbage collection of a storage device, and it controls selective execution of garbage collection by the storage device according to the received information.

An electrically programmable memory device is proposed including: a matrix of memory cells arranged in a plurality of memory arrays and at least one redundancy array; and a substituting structure that substitutes the use of each memory array with the use of one of the at least one redundancy array in response to a failure of the memory array, wherein the memory arrays are grouped into at least one set. The substituting structure includes: a structure for associating each set with a predetermined one of the at least one redundancy array; a flag for each memory array indicative of the failure of the memory array; and a selecting for enabling each memory array or the associated redundancy array according to the corresponding flag.

A method of manufacturing a flash memory is provided. First, a substrate with a first gate structure and a second gate structure thereon is provided. The first gate structure and the second gate structure each comprises of a dielectric layer, a first conductive layer and a cap layer. A tunneling oxide layer is formed over the substrate and then a first spacer is formed on the sidewall of the first conductive layer. Thereafter, a second conductive layer is formed on one side designated for forming a source region of the sidewalls of the first gate structure and the second gate structure. Then, the source region is formed in the substrate in the designated area. Next, an inter-gate dielectric layer is formed over the second conductive layer and then an insulating layer is formed over the source region. After forming a third conductive layer over the area between the first gate structure and the second gate structure, a drain region is formed in the substrate.

A semiconductor structure includes a semiconductor substrate, a planar PMOS device at a surface of the semiconductor substrate, and an NMOS device at the surface of the semiconductor substrate, wherein the NMOS device is a Fin field effect transistor (FinFET).

A method and apparatus for efficiently rasterizing graphics is provided. The method is intended to be used in combination with a frame buffer that provides fast tile-based addressing. Within this environment, frame buffer memory locations are organized into a tile hierarchy. For this hierarchy, smaller low-level tiles combine to form larger mid-level tiles. Mid-level tiles combine to form high-level tiles. The tile hierarchy may be expanded to include more levels, or collapsed to included fewer levels. A graphics primitive is rasterized by selecting an starting vertex. The low-level tile that includes the starting vertex is then rasterized. The remaining low-level tiles that are included in the same mid-level tile as the starting vertex are then rasterized. Rasterization continues with the mid-level tiles that are included in the same high-level tile as the starting vertex. These mid-level tiles are rasterized by rasterizing their component low-level tiles. The rasterization process proceeds bottom-up completing at each lower level before completing at higher levels. In this way, the present invention provides a method for rasterizing graphics primitives that accesses memory tiles in an orderly fashion. This reduces page misses within the frame buffer and enhances graphics performance.

A non-volatile memory including a substrate, a plurality of gate structures, a plurality of select gate structures, spacers and source region/drain region is provided. Each gate structure on the substrate further includes a bottom dielectric layer, an electron trapping layer, an upper dielectric layer, a control gate and a cap layer. The select gate structures are disposed on one side of the respective each gate structure. Each select gate structure includes a select gate dielectric layer and a select gate. The select gate structures and the gate structures are connected in series to form a memory cell row. The spacers are disposed between the select gate structures and the gate structures. The source region and the drain region are disposed in the substrate on each side of the memory cell row.

The present invention provides compositions and methods for ameliorating neurological, attention, or memory disorders and improving learning and cognition through the delivery of insulin A-chain and analogs thereof to a subject. Insulin A-chain, peptides comprising the 21 amino acid sequence GIVEQ CCASV CSLYQ LENYC N (SEQ ID NO:1), and functional analogs thereof are disclosed to modulate neurological activity when administered to a subject. The methods of the invention can be used to prevent or treat neurological disorders as well as improve memory retention and acquisition. The invention includes pharmaceutical compositions comprising a therapeutically or prophylactically effective amount of insulin A-chain peptide or a functional analogs thereof.

A resistive random access memory device, a method for manufacturing the resistive random access memory device, and a method for operating the resistive random access memory device are disclosed. The resistive random access memory device includes a resistive switching memory element including two electrodes and a layer of variable-resistance material between the two electrodes, wherein the layer of variable-resistance material exhibits bipolar resistive switching behavior; and a Schottky diode including a metal layer and a p-doped semiconductor layer which contact each other, wherein the metal layer of the Schottky diode is coupled to one of the two electrodes of the resistive switching memory element. The present disclosure provides the resistive random access memory device operating in bipolar resistive switching scheme.

A method of fabricating a flash memory includes providing a semiconductor substrate with STIs and an active area between two adjacent STIs along a first direction; successively forming a floating-gate insulating layer, a conductive layer, a dielectric layer, a control gate, and a cap layer on the semiconductor substrate; forming spacers on the sidewalls of the cap layer and the control gate; removing the dielectric layer, the conductive layer, and the floating-gate insulating layer not covered by the spacers and the cap layer; performing a selective epitaxial growth process to form an epitaxial layer on the exposed semiconductor substrate in the active area; and forming a source in the epitaxial layer and the semiconductor substrate in the active area.

The invention discloses a nonvolatile memory erase method and a nonvolatile memory erase device. The method comprises the steps that: a target erasing target is subjected to a preprogramming operation, wherein the preprogramming operation is that 0 is written into memory units of the target erase object; whether the preprogramming operation is successful is examined, wherein the examining is that whether currents of the memories in the target erase object processed through the preprogramming operation under a certain gate voltage are all smaller than a target current value which is a current value with current margin; if the preprogramming operation is successful, a next step is executed, and if not, the progress is turned back to the execution of the preprogramming operation; the target erase object is subjected to an erase operation, wherein the erase operation is that 1 is written into memory units of the target erase object; and the target erase object is subjected to an over-erase examine operation, wherein the over-erase examine operation is that threshold voltage of memory units in the target erase object is adjusted. With the method and device provided by the invention, nonvolatile memory erase speed can be improved, and memory performance can be improved.

High performance memory devices have been realized by applying an Evenly Scaled Multiple Level Architecture (ESMLA) using block select arrangement. A single-bit-line-write mechanism allows us to reduce the number of bit lines by 50% for static memory devices. The resulting memory device can be as fast as registers files while its area is smaller than prior art high-density memory devices. The scaling method of the memory architecture also assures that the speed of the memory devices will scale in the same rate as logic circuits in future IC manufacture technologies.

An advanced system and method for optimizing selection of online advertisements is provided. Decision trees with expressions to evaluate feature values for advertisements may be received, and a decision tree similarity matrix of decision tree similarity values between pairs of decision trees may be generated that represent the number of common features between two decision trees. The edges of the decision tree similarity matrix may be sorted in non-increasing order by edge value, and the decision trees of each edge retrieved from the sorted order may be placed in an optimized sequence order for evaluation. In response to a request to serve advertisements, advertisements may be scored by evaluating the decision trees of advertisements in the optimized sequence order. The advertisements may then be ranked in descending order by score, and advertisement with the highest scores may be sent for display.

A NAND flash memory cell row includes first and second stacked gate structures, control and floating gates, inter-gate dielectric layer, a tunnel oxide layer, doping regions and source/drain regions. The first stacked gate structures has an erase gate dielectric layer, an erase gate and a first cap layer. Each of the second stacked gate structure has a select gate dielectric layer, a select gate and a second cap layer. The control gate is between each of the first stacked gate structures, and between each of the second stacked gate structures and the adjacent first stacked gate structure. The floating gate is between the control gate and substrate. The inter-gate dielectric layer is disposed between the control and floating gates. The tunnel oxide is between the floating gate and substrate. The doping regions are disposed under the first stacked gate structure, and the source/drain regions are in the exposed substrate.