A storage control method, control device and storage medium

A control method and technology of a control device, which are applied in static memory, read-only memory, digital memory information, etc., can solve the problems of memory cell function degradation, impact on erasing speed, and easy data loss.

Active Publication Date: 2021-10-26
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When there are more and more storage units in the block, this block erasing method that requires data migration will seriously affect the erasing speed, and the erasing time will be long
Moreover, the erasing method of the whole block will make the erasing frequency of the storage unit very high, which will affect the data retention characteristics of the storage unit, make the data easy to lose, and the function of the storage unit will degrade

Method used

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  • A storage control method, control device and storage medium
  • A storage control method, control device and storage medium
  • A storage control method, control device and storage medium

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Embodiment Construction

[0036] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative efforts belong to the protection scope of the present invention.

[0037] It will be understood that although the terms first, second, etc. may be used herein to describe various components, these components should not be limited by these terms. These terms are used to distinguish one component from another. For example, a first component could be termed a second component, and, similarly, a second component could be termed a first component, without departing from the scope of the present invention.

[0038] It will be understoo...

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Abstract

The invention discloses a memory control method, a control device and a storage medium. Each memory string in a memory block includes a channel layer with an N-type doping region on the top. In one memory block, a bit line erase voltage is applied to selected bit lines and an erase inhibit voltage is applied to unselected bit lines, while a top select gate voltage lower than the bit line erase voltage is applied to the top select gate , when a word line erasing voltage lower than the bit line erasing voltage is applied to the corresponding word line connected to the memory string corresponding to the selected bit line and the unselected bit line, the selected bit line can be corresponding The memory string performs an erase operation. This method of selecting storage strings for erasing by bit lines eliminates data migration and potential data loss during erasing in units of memory blocks, effectively reduces erasing time, and greatly improves erasing efficiency. rate, and can also reduce the number of programming and erasing of memory cells and reduce the degree of degradation of memory cells.

Description

technical field [0001] The present invention generally relates to electronic devices, and more specifically, relates to a memory control method, a control device and a storage medium. Background technique [0002] With the development of 5g and big data, people's demand for storage capacity and storage speed is getting higher and higher. 3D NAND flash memory is currently the mainstream non-volatile memory. At present, the main erasing method of 3D NAND flash memory array is to store Erasing is performed in units of blocks. As the density of storage cells increases, the erasing speed will gradually slow down, which affects the use speed of NAND. [0003] When you choose to erase block1, you need to select an empty block in advance for data migration, and then erase block1. When there are more and more storage units in the block, this block erasing method that requires data migration will seriously affect the erasing speed, and the erasing time will be long. Moreover, the er...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): G11C16/16G11C8/14G11C7/18G11C16/34
CPCG11C16/16G11C8/14G11C7/18G11C16/3404G11C16/14G11C16/08G11C16/0483G11C11/5635G11C16/24
Inventor王均保贾建权
OwnerYANGTZE MEMORY TECH CO LTD