Programming operation method and device of memory

An operation method and memory technology, applied in the field of memory, can solve the problems of programming interference, inability to effectively increase the channel potential, etc.

Active Publication Date: 2021-05-18
YANGTZE MEMORY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this programming operation scheme for the upper stack has the problem that the precharge cannot effectively increase the channel potential, and the programming disturbance is serious.

Method used

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  • Programming operation method and device of memory
  • Programming operation method and device of memory
  • Programming operation method and device of memory

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Embodiment Construction

[0067] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments. In particular, the following examples are only used to illustrate the present invention, but not to limit the scope of the present invention. Likewise, the following embodiments are only some of the embodiments of the present invention but not all of them. All other embodiments obtained by those skilled in the art without creative efforts all fall within the protection scope of the present invention.

[0068] In addition, the directional terms mentioned in the present invention, such as [top], [bottom], [front], [back], [left], [right], [inside], [outside], [side], etc., only is the direction with reference to the attached drawings. Therefore, the directional terms used are used to illustrate and understand the present invention, but not to limit the present invention. In the various figures, structurally similar elements are denoted by the sa...

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Abstract

The invention relates to a programming operation method and device of a memory, the memory comprises a first memory string, a first input end and a second input end, the first input end and the second input end are located at the two ends of the first memory string, the first memory string comprises a plurality of first memory cells connected in series, and the programming operation method comprises the following steps: performing pre-charging of a first programming operation, providing a first preset voltage for a second input end, and providing a second preset voltage for a gate layer of a first memory cell in a programmed state, so that the first memory cell in the programmed state is conducted, and a channel in a first memory string is pre-charged; carrying out first programming operation, wherein the first programming operation carries out programming on the multiple to-be-programmed first storage units from the first storage unit close to the second input end to the direction away from the second input end, and therefore when programming operation is carried out on the storage string, the charge density of a channel can be effectively reduced in the pre-charging stage of the programming operation. And the programming interference is further reduced.

Description

【Technical field】 [0001] The invention relates to the technical field of memory, in particular to a memory programming operation method and device. 【Background technique】 [0002] As technology develops, the semiconductor industry is constantly looking for new production methods to allow each memory die in a memory device to have a greater number of memory cells. Among them, 3D NAND memory has become a cutting-edge three-dimensional memory technology with great development potential due to its advantages of high storage density and low cost. [0003] At present, in the erasing process of 3D NAND memory, in order to improve the erasing efficiency and reduce repeated read and write operations on the storage unit, a half-block erasing scheme will be adopted, that is, for the memory block that has already written data, Only the data of the upper stack or the lower stack in the memory block is erased, and the data of the other stack is not erased. [0004] In the programming pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C5/14G11C16/14
CPCG11C5/147G11C16/14
Inventor 李楷威宋雅丽赵向南
Owner YANGTZE MEMORY TECH CO LTD
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