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Operation method of non-volatile memory device

A non-volatile, operating method technology, applied in the field of 3D flash memory devices, can solve the problems of programming time 3D NAND flash memory programming interference, etc., and achieve the effect of reducing programming interference and improving programming efficiency

Active Publication Date: 2020-12-08
MACRONIX INT CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the longer programming time will make the 3D NAND flash memory suffer from more severe programming disturbance

Method used

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  • Operation method of non-volatile memory device
  • Operation method of non-volatile memory device
  • Operation method of non-volatile memory device

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Embodiment Construction

[0048] Embodiments of the document of the present invention will be described below in conjunction with related drawings. In the drawings, the same reference numerals represent the same or similar elements or method flows.

[0049] figure 1 It is a simplified functional block diagram of the non-volatile memory device 100 according to an embodiment of the present disclosure. The nonvolatile memory device 100 includes a column decoder (row decoder) 110, a word line driver 120, and a memory array 130, and the memory array 130 includes a plurality of word lines 140 1 ~140 N . Column decoder 110 is used for correspondingly providing word signal Sw 1 ~Sw N to word line 140 1 ~140 N , to perform read, erase, program, erase verify, or program verify operations on the memory array 130, and the memory array 130 may be a two-dimensional memory array or a three-dimensional memory array. The word line driver 120 includes a plurality of switches 122 1 ~122 N . switch 122 1 ~122 ...

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Abstract

The invention discloses an operation method of a non-volatile memory device. The operation method is suitable for a non-volatile memory device which includes a column decoder and a memory array. The operation method of the non-volatile memory device comprises the following steps of: transmitting a plurality of word signals to the memory array by using the column decoder; switching a selected wordsignal in the plurality of word signals from a preset voltage level to a programming voltage level by using the column decoder according to a bus; switching at least one auxiliary word signal in the plurality of word signals from a preset voltage level to a first pass voltage level by using the column decoder; when the selected word signal is maintained at the programming voltage level, utilizingthe column decoder to switch at least one auxiliary word signal from the first pass voltage level to a second pass voltage level, wherein the second pass voltage level is higher than the first pass voltage level.

Description

technical field [0001] The invention relates to an operating method of a non-volatile memory device, in particular to an operating method of a 3D flash memory device. Background technique [0002] As the technology of 2D flash memory is gradually approaching the limit of miniaturization, in order to increase the capacity per unit area of ​​flash memory more efficiently, 3D flash memory has gradually attracted the attention of the industry. The flash memory includes NAND type and NOR type, and the NAND type flash memory is widely used because of its high programming and erasing speed. In a 3D NAND flash memory, a plurality of word lines are arranged in parallel at a tight pitch, and each word line is used to control thousands of memory cells, so that each word line has a relatively large transmission impedance. Therefore, the conventional driving method of 3D NAND flash memory requires a rather long programming time to ensure that the target word line is fully charged to the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/08G11C16/12G11C16/34H10B43/27
CPCG11C16/08G11C16/12G11C16/3431G11C16/10G11C16/3427G11C16/0483G11C11/5628G11C16/32H10B43/27
Inventor 张馨文张耀文秦启元
Owner MACRONIX INT CO LTD
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