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Data reading method and device of flash memory and storage equipment

一种数据读取、闪存器的技术，应用在存储领域，能够解决不可修复错误、数据记忆错误无法校正等问题，达到延迟出现时间、减少干扰、提升数据存储准确率的效果

Active Publication Date: 2021-06-25
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the application process, after some data is written into the storage unit, the data memory error will be faster after multiple reads and writes, and in some cases, this data memory error is an irreparable error that cannot be corrected by storage correction.

Method used

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  • Data reading method and device of flash memory and storage equipment
  • Data reading method and device of flash memory and storage equipment
  • Data reading method and device of flash memory and storage equipment

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Embodiment Construction

[0091] The technical solutions of the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0092] Such as figure 1 As shown, this embodiment provides a method for reading data from a flash memory, including:

[0093] Step S110: in the disturbance suppression phase of the read cycle, applying a first voltage to reduce read disturbance to the selected word line of the flash memory;

[0094] Step S120: In the read phase of the read cycle, apply a second voltage for reading data to the selected word line of the flash memory.

[0095] The method for reading data from a flash memory provided in this embodiment can be applied to a storage device including a flash memory.

[0096] The storage device may include: a storage array; the storage array is formed by arranging a plurality of storage units.

[0097] A word line connected to the gate of the memory cell and a bit line connected to the drain of th...

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PUM

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Abstract

The embodiment of the invention discloses a data reading method and device of a flash memory and storage equipment. The method comprises the following steps: in an interference suppression stage, applying a first voltage for suppressing reading interference to a word line selected by a flash memory; in the reading stage, applying a second voltage used for reading data to the word line selected by the flash memory; in the interference suppression stage, applying a first voltage used for suppressing reading interference to a word line selected by the flash memory, wherein the interference suppression stage comprises the following steps: in a first interference suppression stage before the reading stage, a first sub-voltage is applied to the word line selected by the flash memory, wherein the first voltage comprises the first sub-voltage, and the first sub-voltage is higher than the second voltage.

Description

technical field [0001] The present invention relates to the field of storage technology, in particular to a method and device for reading data from a flash memory, and a storage device. Background technique [0002] Flash memory is a non-volatile memory with data memory function. The reading and writing of the flash memory can be performed in units of pages. Due to the large storage capacity of the flash memory, it is widely used in various electronic devices. According to the stacking state of the storage array, the flash memory can be divided into two-dimensional 2D flash memory and three-dimensional 3D flash memory. [0003] In the application process, it is found that after some data is written into the storage unit, the data memory error will be relatively fast after multiple reads and writes, and in some cases, this data memory error is an irreparable error that cannot be corrected by storage correction. Therefore, how to slow down the occurrence of such data memory...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/26G11C16/34
CPCG11C16/3427G11C16/26
Inventor 陈子龙曹华敏付祥高帅姜柯向斌安阳王瑜王颀
Owner YANGTZE MEMORY TECH CO LTD
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