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Data reading method and device of flash memory, storage device and storage medium

A data reading and flash memory technology, which is applied in the storage field, can solve problems such as irreparable errors and data memory errors that cannot be corrected, and achieve the effect of delaying the occurrence time, reducing interference, and reducing the probability of occurrence

Active Publication Date: 2021-05-04
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In the application process, after some data is written into the storage unit, the data memory error will be faster after multiple reads and writes, and in some cases, this data memory error is an irreparable error that cannot be corrected by storage correction.

Method used

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  • Data reading method and device of flash memory, storage device and storage medium
  • Data reading method and device of flash memory, storage device and storage medium
  • Data reading method and device of flash memory, storage device and storage medium

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Embodiment Construction

[0066] The technical solutions of the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0067] Such as figure 1 As shown, this embodiment provides a method for reading data from a flash memory, including:

[0068] Step S110: in the disturbance suppression phase of the read cycle, applying a first voltage to reduce read disturbance to the selected word line of the flash memory;

[0069] Step S120: In the read phase of the read cycle, apply a second voltage for reading data to the selected word line of the flash memory.

[0070] The method for reading data from a flash memory provided in this embodiment can be applied to a storage device including a flash memory.

[0071] The storage device may include: a storage array; the storage column is formed by arranging a plurality of storage units.

[0072] A word line connected to the gate of the memory cell and a bit line connected to the drain of t...

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Abstract

The embodiment of the invention discloses a data reading method and device of a flash memory, a storage device and a storage medium. The method includes: applying a first voltage that reduces read disturbance to a word line selected by the flash memory during a disturbance suppression phase of a read cycle; The second voltage for reading data is applied to the line.

Description

technical field [0001] The invention relates to the field of storage technology, in particular to a method and device for reading data from a flash memory, a storage device and a storage medium. Background technique [0002] Flash memory is a non-volatile memory with data memory function. The reading and writing of the flash memory can be performed in units of pages. Due to the large storage capacity of the flash memory, it is widely used in various electronic devices. According to the stacking state of the storage array, the flash memory can be divided into two-dimensional 2D flash memory and three-dimensional 3D flash memory. [0003] In the application process, it is found that after some data is written into the storage unit, the data memory error will be relatively fast after multiple reads and writes, and in some cases, this data memory error is an irreparable error that cannot be corrected by storage correction. Therefore, how to slow down the occurrence of such da...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/34
CPCG11C16/3427G11C16/26
Inventor 陈子龙曹华敏付祥高帅姜柯向斌安阳王瑜王颀
Owner YANGTZE MEMORY TECH CO LTD
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