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Double layer triangular substrate integrated waveguide filter

A triangular base and integrated waveguide technology, which is applied in the field of millimeter waves, can solve the problems of insufficient research on triangular substrate integrated waveguides, and achieve the effects of improving out-of-band performance, compact structure, and small overall volume

Active Publication Date: 2022-02-22
NANJING UNIV OF POSTS & TELECOMM +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the research on triangular substrate integrated waveguides is still insufficient

Method used

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  • Double layer triangular substrate integrated waveguide filter
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  • Double layer triangular substrate integrated waveguide filter

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Embodiment Construction

[0032] The technical solutions of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0033] Depend on figure 1 , figure 2 It can be seen that the double-layer triangular substrate integrated waveguide bandpass filter of the present invention includes three metal layers and two dielectric layers, which are respectively the top metal layer 1, the upper dielectric layer 2, the middle metal layer 3, the lower dielectric layer 4 and the bottom layer Metal layer 5. Metal vias 7 perpendicular to the surface of the dielectric layer are arranged on the upper dielectric layer 2 and the lower dielectric layer 4 .

[0034] The top metal layer consists of an equilateral triangle, a right triangle with an apex angle of 30°-60° and a microstrip line 6, wherein the right triangle is half of the equilateral triangle. Depend on image 3 It can be seen that the bottom metal layer is composed of an equilateral triangle, a right triangle w...

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Abstract

The invention discloses a double-layer triangular substrate integrated waveguide band-pass filter, which includes three metal layers and two dielectric layers, and the overall structure is divided into two complete equilateral triangular resonant cavities placed close to each other and a An equilateral triangular resonant cavity folded along the center line, two microstrip lines are respectively connected to two complete cavities. A rectangular groove is etched in the middle metal layer to couple the two complete cavities, and a circular hole is etched near the complete cavity as a direct coupling hole between the input and output. The three triangular resonant cavities are coupled in pairs to form a bandpass filter. At the same time, the direct coupling of input and output and the cross-coupling inside the triangular resonant cavity form a transmission zero at low frequencies outside the passband, and form a transmission zero at high frequencies. Two transmission zeros overcome the disadvantage of poor out-of-band performance. The invention has a simple design structure, simple power feeding, can effectively suppress out-of-band harmonics, has low processing difficulty, and is more suitable for application in modern millimeter wave circuit integration.

Description

technical field [0001] The invention relates to a double-layer triangular substrate integrated waveguide filter, which belongs to the technical field of millimeter waves. Background technique [0002] As an important part of RF / microwave circuits, modern filters are developing in the direction of low cost, light weight, miniaturization, high power capacity, and high performance. Substrate Integrated Waveguide (SIW: Substrate Integrated Waveguide) has become a research hotspot because of its high quality factor, low loss, small size, and high power capacity. In the past two decades, several high-performance, low-cost substrate-integrated waveguide filters have been proposed. There are many researchers on the traditional substrate-integrated waveguide technology, such as rectangular and circular substrate-integrated waveguides. However, the research on triangular substrate integrated waveguides is still insufficient. [0003] At the same time, with the continuous improvemen...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01P1/208H01P1/212
CPCH01P1/208H01P1/212
Inventor 邓森屾许锋程勇
Owner NANJING UNIV OF POSTS & TELECOMM
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