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Three-dimensional memory structure

A technology of three-dimensional storage and conductive structure, applied in the direction of electrical components, electric solid devices, circuits, etc., can solve problems such as product failure, abnormal bonding connection of three-dimensional memory, etc., and achieve the effect of stable electrical connection

Pending Publication Date: 2022-01-07
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Such three-dimensional memory may have problems such as abnormal bonding connection, poor product or use reliability.

Method used

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Embodiment Construction

[0025] For a better understanding of the application, various aspects of the application will be described in more detail with reference to the accompanying drawings. It should be understood that these detailed descriptions are descriptions of exemplary embodiments of the application only, and are not intended to limit the scope of the application in any way. Like reference numerals refer to like elements throughout the specification. The expression "and / or" includes any and all combinations of one or more of the associated listed items.

[0026] It should be noted that in this specification, expressions of first, second, third, etc. are only used to distinguish one feature from another, and do not represent any limitation on the features. Accordingly, a first vertical interconnection channel discussed below may also be referred to as a second vertical interconnection channel without departing from the teachings of the present application. vice versa.

[0027] In the drawin...

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Abstract

The invention provides a three-dimensional storage structure. The three-dimensional storage structure comprises a substrate which comprises a first functional area; a first conductive structure which is arranged on the substrate, is electrically connected with the first functional area and is used for realizing the use function of the three-dimensional storage structure; a first vertical interconnection channel which is arranged on the first conductive structure in an electric connection manner; and a second vertical interconnection channel having the same potential as the first vertical interconnection channel in the electrochemical reaction.

Description

technical field [0001] The present application relates to the field of semiconductors, and more specifically, to a three-dimensional storage structure. Background technique [0002] People are pursuing memory with larger storage capacity and higher storage density, so three-dimensional memory has been developed. A three-dimensional memory generally includes a three-dimensional memory structure (stacked memory cells) and peripheral circuits for controlling the memory cells. In order to further increase the proportion of memory cells and reduce the proportion of peripheral circuits, X-stacking technology can be used to bond peripheral circuits on stacked memory cells. [0003] In the X-stacking technology, an upper wafer including peripheral circuits and a lower wafer including a three-dimensional memory structure need to be bonded together. The top layer of the three-dimensional memory structure includes vertical interconnect channels (VIAs), and the bottom layer of periphe...

Claims

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Application Information

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IPC IPC(8): H01L27/11548H01L27/11551H01L27/11575H01L27/11578H01L23/48H01L25/18
CPCH01L23/481H01L25/18H10B41/50H10B41/20H10B43/50H10B43/20
Inventor 尹朋岸胡思平
Owner YANGTZE MEMORY TECH CO LTD
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