Silicon carbide wafer body life image generation method and system and storage medium
A technology of image generation and silicon carbide crystal, which is applied in the direction of 2D image generation, image data processing, complex mathematical operations, etc., can solve the problem of inability to distinguish the recombination rate of silicon carbide surface and the lifetime of minority carriers in the body, and achieve fast, Characterize the effect of the results precisely
Pending Publication Date: 2022-02-18
ZHEJIANG UNIV HANGZHOU GLOBAL SCI & TECH INNOVATION CENT
View PDF0 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, the existing microwave imaging technology can only obtain the equivalent minority carrier lifetime image by measuring the photoconductivity change value of the entire silicon carbide wafer, and the equivalent minority carrier lifetime has the following relationship with the bulk lifetime and the surface recombination rate: where τ eff is the equivalent carrier lifetime, τ b is the bulk lifetime, S is the surface recombination rate, so only knowing the equivalent minority carrier lifetime image is unable to distinguish the surface recombination rate of silicon carbide from the bulk minority carrier lifetime of silicon carbide
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0039] In order to facilitate the understanding of those skilled in the art, the present invention will be further described in detail below in conjunction with specific embodiments.
[0040] refer to figure 1 , an embodiment of the present invention provides a method for generating a lifetime image of a silicon carbide wafer, comprising the following steps:
[0041] Step S10, acquiring a PL image of the silicon carbide wafer;
[0042] Step S20, establishing the PL signal strength equation PL count=BΔnΔp, wherein PL count represents the PL signal strength, B represents the light reflection absorption coefficient, Δn represents the minority carrier concentration, and Δp represents the non-equilibrium state hole concentration;
[0043] Step S30, establishing the carrier continuity equation Where z represents the wafer depth coordinate, t represents time, Δn represents the minority carrier concentration, Dn represents the minority carrier diffusion coefficient, τ b Represents...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides a silicon carbide wafer body life generation method, a silicon carbide wafer body life generation system and a storage medium, and relates to the technical field of silicon carbide. A photoluminescence imaging instrument is used for obtaining a PL image of the silicon carbide wafer, and then a minority carrier continuity equation, a silicon carbide wafer front surface recombination rate equation, a silicon carbide wafer rear surface recombination rate equation and a PL signal intensity equation are used for obtaining a function relationship between the service life of the silicon carbide wafer body and the PL signal strength through numerical calculation of a partial differential equation by a computer; and a body life image of the silicon carbide wafer is obtained according to the function relation and the PL image. Compared with a microwave imaging method, the speed is higher through the photoluminescence imaging instrument, meanwhile, the body life image of the silicon carbide wafer can be directly obtained instead of an equivalent minority carrier life image, and the characterization result is more accurate.
Description
technical field [0001] The present invention relates to the technical field of silicon carbide, in particular to a method, system and storage medium for generating a lifetime image of a surface of a silicon carbide wafer. Background technique [0002] The minority carrier lifetime of silicon carbide wafers is a very important parameter to measure the quality of silicon carbide wafers, which can usually be measured in a non-destructive and non-contact manner by microwave technology. [0003] Recent technological developments have made it possible to obtain equivalent minority carrier lifetime images of SiC wafers using microwave imaging, but this technique still has some shortcomings. First, the minority carrier lifetime of the SiC wafer consists of two parts, namely the surface recombination rate of the SiC wafer and the minority carrier lifetime of the SiC wafer. However, the existing microwave imaging technology can only obtain the equivalent minority carrier lifetime ima...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & AuthorityApplications(China)
IPC IPC(8): G01N21/88G01N21/95G06F17/11G06F17/16G06T11/00
CPCG01N21/8851G01N21/95G06F17/11G06F17/16G06T11/00G01N2021/8887
Inventor宋立辉皮孝东杨德仁茆威威
OwnerZHEJIANG UNIV HANGZHOU GLOBAL SCI & TECH INNOVATION CENT