A method for characterizing the growth interface and growth rate of crystalline silicon
A technology of growth rate and crystalline silicon, which is applied in the directions of crystal growth, single crystal growth, polycrystalline material growth, etc., and can solve the problem of inaccurate methods for characterizing the growth interface and growth rate of crystalline silicon
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Embodiment 1
[0072] A method for characterizing crystalline silicon growth interface and growth rate, comprising the steps of:
[0073] During the growth of crystalline silicon, O was introduced into the ingot furnace after 16 h of crystal growth 2 , the introduction time is 3h, calculated as oxygen element, O 2 The gas flow rate is 13g / min, O 2 Dissolve and solidify in crystalline silicon to obtain oxygen precipitation and interstitial oxygen, so as to obtain the first oxygen-rich layer rich in oxygen elements, and then after an interval of 4 hours, introduce O into the ingot furnace for the second time during the crystal growth process 2 , O 2 Oxygen precipitation and interstitial oxygen are obtained after dissolution and solidification, thereby obtaining a second oxygen-rich layer rich in oxygen elements. The introduction time is 30min, and in terms of oxygen elements, O 2 The gas flow rate was 13 g / min, and the crystal growth continued after the introduction of gas was stopped. Aft...
Embodiment 2
[0077] A method for characterizing crystalline silicon growth interface and growth rate, comprising the steps of:
[0078] During the growth of crystalline silicon, the doped SiO 2 Powdered Argon, SiO 2 The doping amount in argon is 0.002g / cm 3 , the introduction time is 3h, calculated as oxygen element, doped with SiO 2 The flow rate of argon gas for powder is 35g / min, SiO 2 Dissolve and solidify in crystalline silicon to obtain oxygen precipitation and interstitial oxygen, so as to obtain the first oxygen-rich layer rich in oxygen elements, and then introduce SiO doped into the argon gas of the ingot furnace for the second time during the crystal growth after an interval of 5h 2 Powdered Argon, SiO 2 Doping is dissolved and solidified to obtain oxygen precipitation and interstitial oxygen, so as to obtain a second oxygen-rich layer rich in oxygen elements. The introduction time is 30 minutes. In terms of oxygen elements, it is doped with SiO 2 The flow rate of the argon...
Embodiment 3
[0081] A method for characterizing crystalline silicon growth interface and growth rate, comprising the steps of:
[0082] Introducing CO into the ingot furnace during the growth of crystalline silicon 2 , the introduction time is 2h, the gas flow rate is 53g / min, CO 2 Dissolve and solidify in crystalline silicon to obtain oxygen precipitates and interstitial oxygen, thereby obtaining an oxygen-rich layer rich in oxygen elements, and continue to grow crystals after stopping the introduction of gas. After the crystal growth is completed, crystalline silicon is obtained.
[0083] The infrared test of crystalline silicon was carried out by German SIS300-3D IR equipment, and the infrared test (IR) diagram of crystalline silicon was obtained.
[0084] Figure 6 It is an infrared test (IR) diagram of the crystalline silicon prepared in Example 3 of the present invention. From Figure 6 An oxygen-rich layer can be seen in , which is denoted by 5 .
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Abstract
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