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Method of forming barrier layer

A barrier layer and component layer technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of insufficient thickness of titanium nitride layer

Inactive Publication Date: 2006-05-24
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, if the TiN barrier formed by this conventional process is applied to a high aspect ratio contact, the thickness of the TiN layer at the bottom of the contact is usually insufficient

Method used

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  • Method of forming barrier layer

Examples

Experimental program
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Embodiment Construction

[0030] figure 1 It is a cross-sectional view of a part of a semiconductor substrate including a barrier layer in a preferred embodiment of the present invention. First, as figure 1 As shown, a component layer 101 is formed on a semiconductor substrate 100, and the component layer 101 includes at least one conductive region 102 and at least one isolation structure 103. The component layer also includes one or more transistor components (not shown), and / or one or more metal layers (not shown). The isolation structure 103 is, for example, a field oxide layer or a shallow trench isolation structure. An interlayer dielectric layer 104 is formed on the substrate 100 and covers the isolation structure 103 and the lower conductive area 102. The conductive region 102 can be a polysilicon gate layer or a source / drain region of a transistor, or a metal layer. For silicon-based semiconductor substrates, the dielectric material of the interlayer dielectric layer can be silicon dioxide, or i...

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Abstract

The invention discloses a method for forming a titanium / titanium nitride layer applied to a high-aspect-ratio contact / via opening. A titanium layer is formed by using ion metal plasma, and a titanium layer is deposited by metal organic chemical vapor deposition. Before the titanium nitride layer, implement a gas stabilization step, provide a hydrogen, a helium, a reaction source and a delivery gas to adjust the pressure, and use the hydrogen in the gas stabilization step to reduce the resistance and capacitance (RC) before depositing titanium nitride. The reflectance of the retardation and barrier layers, thus improving the performance of contact / via plugs and devices.

Description

Technical field [0001] The present invention relates to a method of manufacturing an integrated circuit (IC), and more particularly to a method of manufacturing a barrier layer used in contact plugs and via plugs (Contact / Via Plug). Background technique [0002] In order to meet the increasing complexity and accuracy requirements of semiconductor integrated circuits, two or more metal interconnect layers (Metal Interconnect Layers) are often formed on the substrate in semiconductor manufacturing. At present, a contact plug is used to connect the terminal of a MOS part and a metal layer, and a via plug is used to connect two different metal layers. The plug technology used in most VLSI processes is a tungsten plug. [0003] Sandwiching another material between two contacting layers (such as tungsten and silicon) can prevent the material from mixing between the two layers. The main function of the third material is to prevent the diffusion between the two materials (Diffusion), or ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3205H01L21/285H01L21/768
CPCH01L21/2855H01L21/28556H01L21/76843H01L21/76865
Inventor 黄俊智陈太郎
Owner UNITED MICROELECTRONICS CORP